Very high performance sub-0.1 /spl mu/m channel nMOSFET's are fabricated with 35 /spl Aring/ gate oxide and shallow source-drain extensions. An 8.8-ps/stage delay at V/sub dd/=1.5 V is recorded from a 0.08 /spl mu/m channel nMOS ring oscillator at 85 K. The room temperature delay is 11.3 ps/stage. These are the fastest switching speeds reported to date for any silicon devices at these temperatures. Cutoff frequencies (f/sub T/) of a 0.08 /spl mu/m channel device are 93 GHz at 300 K, and 119 GHz at 85 K, respectively. Record saturation transconductances, 740 mS/mm at 300 K and 1040 mS/mm at 85 K, are obtained from a 0.05 /spl mu/m channel device. Good subthreshold characteristics are achieved for 0.09 /spl mu/m channel devices with a source-drain halo process. >

Very high performance sub-0.1mum channel nMOSFET's are fabricated with 35 angstrom gate oxide and shallow source-drain extensions. An 8.8-ps/stage delay at V(dd) = 1.5 V is recorded from a 0.08mum channel nMOS ring oscillator at 85 K. The room temperature delay is 11.3 ps/stage. These are the fastest switching speeds reported to date for any silicon devices at these temperatures. Cutoff frequencies (f(T)) of a 0.08-mum channel device are 93 GHz at 300 K, and 119 GHz at 85 K, respectively. Record saturation transconductances, 740 mS/mm at 300 K and 1040 mS/mm at 85 K, are obtained from a 0.05-mum channel device. Good subthreshold characteristics are achieved for 0.09 mum channel devices with a source-drain halo process.

Very high performance 0.1 /spl mu/m nMOSFETs are fabricated with 3.5 nm gate oxide and shallow arsenic/boron (halo) source-drain extension. A 10 ps/stage della is recorded at 85 K from a 0.08 pm channel ring osMlator, which is the fastest switching speed ever re- ported for any silicon device. The delay at room temper- ature is 13 ps/stage. Unity-current-gain frequency cutoffs (f/sub r/) of a 0.09 /spl mu/m channel device are 119 GHz at 85 K and 93 GHz at 300 K. Record high saturation transconductances, 1040 mSImm at 85 K and 740 mS/MM at 300 K , are obtained from a 0.05 /spl mu/m channel device. Good subthreshold characteristics are achieved for 0.1 /spl mu/m channel devices.

A new fabrication process for sub-0.1 μm silicon n-metal–oxide–semiconductor field effect transistors with composite metal/polysilicon gates is described. Gate resistance is reduced below that of plain polysilicon or silicided gates, so that higher speed performance is obtained from shorter gate length devices. The process has resulted in 0.08 μm channel length ring oscillators with record per stage delays of 10.5 ps at 85 K and 13 ps at room temperature, and unity-current-gain cutoff frequencies of 119 GHz at 85 K and 93 GHz at 300 K. Record high transconductances of 1040 mS/mm at 85 K and 740 mS/mm at 300 K have been measured in 0.05 μm channel length devices.