We present in this article a comparison of 1.3 μm InAs0.45P0.55/In0.81Ga0.19P strain-compensated multiple quantum well (SC-MQW) modulators with and without an InP insertion layer. Material quality was evaluated by cross-sectional transmission electron microscope analysis, x-ray rocking curves with dynamical simulations, and photoluminescence measurements. Devices were fabricated and device performance criteria such as contrast ratio (C.R.) and uniformity were also compared. It was found that higher C.R. and highly uniform InAsP/InGaP SC-MQW modulators can be achieved by inserting thin InP layers at the heterointerfaces between InAsP and InGaP.

We report on the effect of inserting ultra-thin InAs layers at the heterointerfaces on physical properties of GaAs/InGaP on GaAs and InP/GaAs on InP grown by MOCVD and MOMBE, respectively. It is shown that the insertion of ultra thin InAs layers at the heterostructure interfaces has a significant effect in eliminating defects from the interfaces