The aim of this study was to investigate whether a textile electrode coated with an amorphous silicon thin film can be used as an actuator element in a lithium electrolysis process in comparison to a crysralline silicon wafer stripe. It is well known from battery research that a deformation of the silicon electrode occurs during lithiation. This reversible process is being studied as a mechanical switch to move lightweight textiles for potential applications such as ventilation, thermal management, privacy protection, etc. To identify a solution, silicon thin film coatings on textile substrates, electrolytes and the lithiation process have been examined under both inert laboratory and application conditions. Methods such as cyclic voltammetry, amperometry and impedance spectroscopy were used to analyze the electrolytic process, and secondary ion mass spectrometry and electrical analysis were used to obtain material information. It is shown that the charging and discharging of lithium ions is associated with bending for more than 5 cycles. During this process, repeated forward and backward movements of the textile electrode were observed at low voltages below -10 V. Bending forces in the range of 0.2-0.7 mN dependent on the charging time, and a current flow in the range of -0.01 to -440 mu A dependent on the voltage, were measured. This is suitable for the scenario where low force is required.

AbstractFabrication and characterization of solar cells based on multicrystalline silicon (mc‐Si) thin films are described and synthesized from low‐cost soda‐lime glass (SLG). The aluminothermic redox reaction of the silicon oxide in SLG during low‐temperature annealing at 600 – 650 °C leads to an mc‐Si thin film with large grains of lateral dimensions in the millimeter range, and moderate p‐type conductivity with an average Al acceptor concentration between 5 × 1016 and 1.2 × 1017 cm−3 in the bulk. A residual composite layer of mainly alumina and unreacted Al forms beneath the mc‐Si thin film as the second product of the crystalline silicon synthesis (CSS) process, which can be used as rear contact in a vertical solar cell design. The mc‐Si absorber (≈10 µm) is thin enough that the diffusion length given by a minority carrier lifetime of ≈1 µs exceeds the path length to the top contact several times. Homojunction and heterojunction diodes have been fabricated on the mc‐Si thin films and show great potential of CSS for the realization of high‐performance solar cells.

Laser safety is starting to play an increasingly important role, especially when the laser is used as a tool. Passive laser safety systems quickly reach their limits and, in some cases, provide inadequate protection. To counteract this, various active systems have been developed. Flexible and especially textile-protective materials pose a special challenge. The market still lacks personal protective equipment (PPE) for active laser safety. Covering these materials with solar cells as large-area optical detectors offers a promising possibility. In this work, an active laser protection fabric with amorphous silicon solar cells is presented as a large-scale sensor for continuous wave and pulsed lasers (down to ns). First, the fabric and the solar cells were examined separately for irradiation behavior and damage. Laser irradiation was performed at wavelengths of 245, 355, 532, and 808 nm. The solar cell sensors were then applied directly to the laser protection fabric. The damage and destruction behavior of the active laser protection system was investigated. The results show that the basic safety function of the solar cell is still preserved when the locally damaged or destroyed area is irradiated again. A simple automatic shutdown system was used to demonstrate active laser protection within 50 ms.

The most precise measurement tools of humankind are equipped with ultra-stable lasers. State-of-the-art laser stabilization techniques are based on external cavities, that are limited by noise originated in the coatings of the cavity mirrors. Microstructured mirror coatings (so-called meta-mirrors) are a promising technology to overcome the limitations of coating noise and therewith pave the way towards next-generation ultra-stable lasers. We present experimental realization of a 12,000-finesse optical cavity based on one low-noise meta-mirror. The use of the mirrors studied here in cryogenic silicon cavities represents an order of magnitude reduction in the current limiting mirror noise, such that the stability limit due to fundamental noise can be reduced to 5 × 10 −18 .

It is demonstrated that systematic and designated control of supramolecular nanostructures via interfacial engineering enables (opto)electronic C 60 ‐material properties to be widely adjusted. Interestingly, the lowest unoccupied molecular orbital (LUMO) energies of the same amphiphilic fullerene species are tuned up to 120 meV using supramolecular assembly, competitive to complete molecular change; cf. PC 61 BM to PC 71 BM causes a change of 200 meV. Morphology control is achieved through different thin‐film production techniques involving molecular assembly at interfaces, including liquid–liquid interfacial precipitation (LLIP), and Langmuir–Blodgett technique at air–water interface. LLIP enables supramolecularly ordered extended surfaces, yielding the least electronically stable LUMO ( E LUMO = −4.28 eV). After qualitatively explaining the observed electrochemical LUMO energy variation for these assemblies with varied molecular packing and aggregate dimensions, an analytical equation is proposed, connecting morphological parameters with LUMO energies with prospects in supramolecular chemistry. To demonstrate the applicability of supramolecular structure–electronic property relations and of supramolecular structure fabrication protocols established in this work to tailor device properties, amorphous‐Si/fullerene hybrid solar cells are built and characterized. It is found that the supramolecular structure variation can be successfully translated to the solar cells, giving rise to a prototype linear relation between LUMO energy and open‐circuit voltage.

This paper describes the deposition of superconductive Nb-N thin films in a metal-organic plasma-enhanced atomic layer deposition process using (tert-butylimido)-tris (diethylamino)-niobium and hydrogen plasma as precursors. In extension of our previous work, which investigated the possibility to deposit superconducting Nb-N, we systematically investigated the influence of different plasma parameters on superconducting and morphological properties of the niobium nitride thin film formed during the process. An initial increase of the duration of the plasma dose led to higher transitions temperatures and critical current densities, the optimum being a plasma dose time of 50 s. By decreasing plasma pressure, the resistivity at room temperature decreased, while the transition temperature increased. In addition, Nb-N thin films were deposited onto several substrates such as silicon, thermally grown silica, magnesium oxide (MgO), and r-plane sapphire. ${\rm{T}}_{{\rm{C}}}$ values from 6.2 K up to 14 K were achieved independently of the substrate materials. However, films deposited on MgO showed lower ${\rm{T}}_{{\rm{C}}}$ values. X-ray photoelectron spectroscopy measurement revealed the presence of niobium nitride but also of niobium oxide and oxy-nitride components in the films as well as the existence of a high amount of incorporated carbon impurities. X-ray diffraction measurements revealed two significant reflexes, which could be attributed to niobium nitride only. No crystalline niobium oxide or niobium oxynitride was detected. Thus, the films consisted of a matrix of polycrystalline Nb-N and amorphous or microcrystalline grains of different niobium oxide and oxynitride phases. Due to the fact that the deposited material showed superconductivity especially for ultrathin layers with thicknesses in the nanometer range, these films may be suitable for superconducting nanowire single photon detectors.

Using liquid phase epitaxy (LPE) technique (111) yttrium iron garnet (YIG) films with thicknesses of ~100 nm and surface roughnesses as low as 0.3 nm have been grown as a basic material for spin-wave propagation experiments in microstructured waveguides. The continuously strained films exhibit nearly perfect crystallinity without significant mosaicity and with effective lattice misfits of delta a(perpendicular)/a(substrate) ~10-4 and below. The film/substrate interface is extremely sharp without broad interdiffusion layer formation. All LPE films exhibit a nearly bulk-like saturation magnetization of (1800+-20) Gs and an `easy cone' anisotropy type with extremely small in-plane coercive fields <0.2 Oe. There is a rather weak in-plane magnetic anisotropy with a pronounced six-fold symmetry observed for saturation field <1.5 Oe. No significant out-of-plane anisotropy is observed, but a weak dependence of the effective magnetization on the lattice misfit is detected. The narrowest ferromagnetic resonance linewidth is determined to be 1.4 Oe @ 6.5 GHz which is the lowest value reported so far for YIG films of 100 nm thicknesses and below. The Gilbert damping coefficient for investigated LPE films is estimated to be close to 1 x 10-4.

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiOxNy) or silicon oxide (SiO2) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiOxNy formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiOxNy top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

In this contribution, amorphous silicon thin-film solar cells on textile glass fiber fabrics for smart textiles are prepared and the photovoltaic performance is characterized. These solar cells on fabrics delivered open circuit voltages up to 883 mV. This shows that shunt-free contacting of the solar cells was successful, even in case of non-planar fabrics. The short-circuit current densities up to 3.7 mA/cm(2) are limited by transmission losses in a 10 nm thin titanium layer, which was used as a semi-transparent contact. The low conductivity of this layer limits the fill factor to 43.1%. Pseudo fill factors, neglecting the series resistance, up to 70.2% were measured. Efficiencies up to 1.4% and pseudo efficiencies up to 2.1% were realized on textile fabrics. A transparent conductive oxide could further improve the efficiency to above 5%. (C) 2015 Elsevier B.V. All rights reserved.