v a kartashev | AMiner学者主页

1The Growth of CdTe Layer on GaAs Substrate by MBE

S.A. Dvoretsky,N.N. Mikhailov,D.G. Ikusov,V.A. Kartashev, A.V. Kolesnikov,I.V. Sabinina,Yu. G. Sidorov,V.A. Shvets

2020Methods for Film Synthesis and Coating Procedures引用：3

引用

2<title>The state of the art and prospects of Cd<formula><inf><roman>x</roman></inf></formula>Hg<formula><inf><roman>1-x</roman></inf></formula>Te molecular beam epitaxy</title>

V. S. Varavin,A. K. Gutakovsky,S. A. Dvoretsky,V. A. Kartashev,A. V. Latyshev,N. N. Mikhailov,D. N. Pridachin, V. G. Remestnik, S. V. Rukhlitsky,I. V. Sabinina,Yu. G. Sidorov,V. P. Titov,

2003SPIE Proceedings引用：1

引用

AI阅读

3The State of the Art and Prospects of Cdxhg1-Xte Molecular Beam Epitaxy

VS Varavin,AK Gutakovsky,SA Dvoretsky,VA Kartashev,AV Latyshev,NN Mikhailov,DN Pridachin, VG Remestnik, SV Rukhlitsky,IV Sabinina,YG Sidorov,VP Titov,

Molecular beam epitaxy of MCT makes it possible to dissolve the problems of producing MCT heteroepitaxial structures with uniformity parameters on the large size alternative substrates for IR PD of existent and new generation and the growing of MCT layers on Si -substrates. The information about characteristics of geteroepitaxial structures on GaAs-substrates, a new generation equipment for controlled growing of MCT layers by MBE and technological conditions allowed to grow the epitaxial buffer CdTe layers on Si-substrates are represented in this work.

200317TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES（2003）引用：2

引用

AI阅读

研究兴趣

作者统计

相似学者

研究兴趣

作者统计

相似学者