A theoretical modeling of the formation of Frenkel pairs and the diffusion of a self-interstitial atom in silicon crystals at normal and high (hydrostatic) pressures has been performed using molecular dynamics, semiempirical quantum-chemical (NDDO-PM5, PM6), and ab initio (SIESTA) methods. It is shown that, in a silicon crystal, the most stable configuration of a self-interstitial atom in the neutral charge state (I 0) is the split configuration 〈110〉. The shifted tetrahedral configuration (T 1) is stable in the singlet and triplet excited states, as well as in the charge state Z = +2. The split 〈110〉 interstitial configuration remains stable under hydrostatic pressure (P ≤ 80 kbar). The activation barriers for diffusion of self-interstitial atoms in silicon crystals are determined to be as follows: ΔE a (Si)(〈110〉 → T 1) = 0.59 eV, ΔE a (Si)(T 1 → T′1) = 0.1 eV, and ΔE a (Si)(T 1 → 〈110〉) = 0.23 eV. The hydrostatic pressure (P ≤ 80 kbar) increases the activation barrier for diffusion of self-interstitial atoms in silicon crystals. The energies of the formation of a separate Frenkel pair, a self-interstitial atom, and a vacancy are determined. It is demonstrated that the hydrostatic pressure decreases the energy of the formation of Frenkel pairs.

The electrophysical properties of Ge crystals with defect clusters (DC) introduced by irradiation with 660 MeV protons are studied. In order to determine the DC radius and macroscopic formation section the crystals with DC are irradiated with γ-rays of 60Co. On the basis of the proposed analysis of the Hall mobility and Hall constant in successively proton- and γ-irradiated crystals the macroscopic formation section (Σ = 0.1 m−1) and radius (R0 = 4 × 10−6 m) of DC are determined. Experimental values of Σ and R0 are compared with theoretical ones. [Russian Text Ignored].