He++ ion irradiation effect on resistive characteristics and upper critical field Hc2(T) of YBa2Cu3O7 and HoBa2Cu3O7 c-axis oriented films has been studied. Analyzing the normal states resistivity modification and Tc degradation with influence F, we estimated the Hc2(T) change in GLAG theory. The -dHc2/dT rise with F has been found. The measured resistive transition midpoint shift TcH-Tc in magnetic field proves higher, then one found from the estimated Hc2(T). So, the transition broadening has been found to be the main effect, determining the TcH-Tc, at least for high fluences.

Caused by magnetic field H broadening δTH of resistive transition width has been measured for high-Tc c-oriented films irradiated by He++ ions. Found relation δTH=B·H23 with the coefficient B depending on fluence is interpreted in terms of flux motion and order parameter fluctuations. The δTH anisotropy proves low sensitive to then irradiation. Decrease of the transition midpoint shift anisotropy is considered as a display of Hc2 anisotropy lowering.

We have investigated upper critical field Hc2 (T) in correlation with resistivity ϱ of HoBa2Cu3O7-x and YBa2Cu3O7-x polycrystal and single-crystal films, including ones irradiated by ions He++. The results were considerded mainly in terms of electronic structure and percolation model.