The possibility to increase the responsivity of 4H-SiC p+-n-n+-photodiodes by varying the thickness of the p+-epilayer has been studied. It is shown that the thinning of the upper epilayer by RIE with the use of metal contacts as a mask makes it possible to control both the maximum responsivity and the spectral dependence of the responsivity of photodiodes and does not lead to degradation of dark electrical characteristics. Keywords: 4H-SiC, p+-n-n+-photodiode, UV-range, p+-epilayer, reactive ion etching RIE, responsivity.

A physical and technological analysis of silicon-carbide epitaxial structures as the basic components of betavoltaic converters (BVC) is carried out. The main factors limiting the efficiency of SiC-BVCs are determined. It is shown that in order to provide the required level of electric power for an actually long-term inexhaustible energy source, it is necessary to use series-parallel hybrid circuits of large-area betavoltaic multichip converters.

The results of studies on the development of technological methods for the formation of low-resistivity contact systems to n- and p-SiC based on single and multilayer Ni-, Al- and Ti-compositions for 4H-SiC based bipolar devices are presented. It is shown that the formation of low-resistivity contacts based on Ni to n-4H-SiC (rho c =3.6·10 -4 Ohm·cm 2 ) and Ni/Al to p-4H-SiC (rho c =5.9·10 -5 Ohm·cm 2 ) is possible within a single cycle of vacuum annealing at 1000 o C for 120 s. This technological solution makes it possible to reduce the number of high-temperature processes. Keywords: 4H-SiC, n-type, p-type, ohmic contacts, RTA, TLM, specific contact resistivity.

The results of studies on the development of technological methods for the formation of low-resistivity contact systems to n- and p-SiC based on single and multilayer Ni-, Al- and Ti-compositions for 4H-SiC based bipolar devices are presented. It is shown that the formation of low-resistivity contacts based on Ni to n-4H-SiC (ρс = 3.6∙10-4 Ω∙cm2) and Ni/Al to p-4H-SiC (ρс = 5.9 ∙10-5 Ω∙cm2) is possible within a single cycle of vacuum annealing at 1000 °C for 120 s. This technological solution makes it possible to reduce the number of high-temperature processes.

The possibility to increase the responsivity of 4H-SiC p+– n –n+ - photodiodes by varying the thickness of the p+ - epilayer has been studied. It is shown that the thinning of the upper epilayer by RIE with the use of metal contacts as a mask makes it possible to control both the maximum responsivity and the spectral dependence of the responsivity of photodiodes and does not lead to degradation of dark electrical characteristics.

The article discusses the possibility of using silicone lacquer as a masking coating when creating micro-dimensional mesa structures on the 4H-SiC surface using the reactive ion-plasma etching method. The etching process was carried out on a setup with an ICP plasma source. The experiments were performed with the aim of determining the dependence of the angle of inclination of the wall of the mesa structure on the parameters of the etching process. The etching results were recorded with a Helius nanolab instrument complex and a Quanta Inspec raster electron microscope.

The features of the formation of non-vertical profiles on 4H-SiC by reactive-ion etching (RIE) using various masking coatings are studied. The formation of 4H-SiC mesa structures was carried out using automated airlock reactive-ion etching and plasma etching system "Caroline PE 15" with the ICP-source of plasma in a gas mixture of SF6, O-2 and Ar. Using photoresist AZ4533 as a mask, mesa structures with a wall inclination angle of more than 130 degrees were obtained at the etching rate of 4H-SiC was similar to 0.5 mu m/min. The developed technology of dry etching can be further used in the preparation of avalanche photodiodes or power electronics devices.

This paper presents the results of mechanical stresses measurement in thin metal films in the composition of MEMS structures. The main requirements for metal films for MEMS are presented, recommendations for choosing methods of film deposition are given.

A process of deep profiles formation on silicon carbide using ion-plasma etching in fluoride plasma is discussed. An industrial equipment «Caroline PE 15» (Russia) with ICP plasma source was used in experiments. The obtained experimental samples are perspective in power electronics applications.

In this article a formation process of dielectric films on silicon (100) and silicon carbide using plasma-chemical deposition is described. Experimental relationships of SiO2 films thickness and main technological parameters are presented. Values of electro-physical parameters of films are measured.