High-performance nonvolatile resistive random access memories (ReRAMs) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emerging Internet of Things (IoT) arena. Here, we examine the resistive switching (RS) behavior in growth-controlled HfO2/La0.67Sr0.33MnO3 (LSMO) heterostructures and their tunability in a low magnetic field. It is demonstrated that oxygen-deficient HfO2 films show bipolar switching with a high on/off ratio, stable retention, as well as good endurance owing to the orthorhombic-rich phase constitution and charge (de)trapping-enabled Schottky-type conduction. Most importantly, we have demonstrated that RS can be tuned by a very low externally applied magnetic field (∼0-30 mT). Remarkably, application of a magnetic field of 30 mT causes RS to be fully quenched and frozen in the high resistive state (HRS) even after the removal of the magnetic field. However, the quenched state could be resurrected by applying a higher bias voltage than the one for initial switching. This is argued to be a consequence of the electronically and ionically "active" nature of the HfO2-x/LSMO interface on both sides and its susceptibility to the electric and low magnetic field effects. This result could pave the way for new designs of interface-engineered high-performance oxitronic ReRAM devices.

Recently, nanolaminated ternary carbides have attracted immense interest due to the concomitant presence of both ceramic and metallic properties. Here, we grow nanolaminate Ti3AlC2 thin films by pulsed laser deposition on c-axis-oriented sapphire substrates and, surprisingly, the films are found to be highly oriented along the (103) axis normal to the film plane, rather than the (000l) orientation. Multiple characterization techniques are employed to explore the structural and chemical quality of these films, the electrical and optical properties, and the device functionalities. The 80-nm thick Ti3AlC2 film is highly conducting at room temperature (resistivity of 50 micro ohm-cm), and a very-low-temperature coefficient of resistivity. The ultrathin (2 nm) Ti3AlC2 film has fairly good optical transparency and high conductivity at room temperature (sheet resistance of 735 ohm). Scanning tunneling microscopy reveals the metallic characteristics (with finite density of states at the Fermi level) at room temperature. The metal-semiconductor junction of the p-type Ti3AlC2 film and n-Si show the expected rectification (diode) characteristics, in contrast to the ohmic contact behavior in the case of Ti3AlC2 on p-Si. A triboelectric-nanogenerator-based touch-sensing device, comprising of the Ti3AlC2 film, shows a very impressive peak-to-peak open-circuit output voltage of 80 V. These observations reveal that pulsed laser deposited Ti3AlC2 thin films have excellent potential for applications in multiple domains, such as bottom electrodes, resistors for high-precision measurements, Schottky diodes, ohmic contacts, fairly transparent ultrathin conductors, and next-generation biomechanical touch sensors for energy harvesting.

We report comparative field electron emission (FE) studies on a large-area array of two-dimensional MoS2-coated @ one-dimensional (1D) brookite (β) TiO2 nanorods synthesized on Si substrate utilizing hot-filament metal vapor deposition technique and pulsed laser deposition method, independently. The 10 nm wide and 760 nm long 1D β-TiO2 nanorods were coated with MoS2 layers of thickness ∼4 (±2), 20 (±3), and 40 (±3) nm. The turn-on field (Eon) of 2.5 V/μm required to a draw current density of 10 μA/cm2 observed for MoS2-coated 1D β-TiO2 nanorods emitters is significantly lower than that of doped/undoped 1D TiO2 nanostructures, pristine MoS2 sheets, MoS2@SnO2, and TiO2@MoS2 heterostructure-based field emitters. The orthodoxy test confirms the viability of the field emission measurements, specifically field enhancement factor (βFE) of the MoS2@TiO2/Si emitters. The enhanced FE behavior of the MoS2@TiO2/Si emitter can be attributed to the modulation of the electronic properties due to heterostructure and interface effects, in addition to the high aspect ratio of the vertically aligned TiO2 nanorods. Furthermore, these MoS2@TiO2/Si emitters exhibit better emission stability. The results obtained herein suggest that the heteroarchitecture of MoS2@β-TiO2 nanorods holds the potential for their applications in FE-based nanoelectronic devices such as displays and electron sources. Moreover, the strategy employed here to enhance the FE behavior via rational design of heteroarchitecture structure can be further extended to improve other functionalities of various nanomaterials.

Centre for Physical Sciences, School of Basic of Punjab, Bathinda, 151001, India. E-mail: Department of Physics, Savitribai Phule P Pune), Pune 411007, India. E-mail: mam@p Department of Physics, National Dong H Republic of China. E-mail: ronma@mail.nd Nowrosjee Wadia College of Arts & Scien 411001, India Physical & Materials Chemistry Division, Homi Bhabha Road, Pune 411008, India Centre for Chemical Sciences, School of University of Punjab, Bathinda, 151001, Ind Department of Physics, University of Konsta Cite this: RSC Adv., 2016, 6, 98722

The vertically aligned and uniformly dispersed β-TiO2nanorods injected electrons direct toward emission sites, and prominently contributed to the low turn-on field of 3.9 V μm−1at a current density of 10 μA and also enhance the emission stability.

Structural and optical modifications induced by low-energy (≤80 eV) bias-plasma annealing of silver nanoclusters (2–25 nm) grown by magnetron sputtering deposition are reported. By combining postmortem structural characterizations and real-time optical measurements, we show that etching effects associated with enhanced Ag mobility result in progressive and irreversible changes of both the morphology and organization of the nanoclusters (i.e., decrease of the cluster size and intercluster distance as well as increase of their out-of-plane aspect ratio). Surface plasmon resonance bands of the nanoclusters are also modified by plasma treatment, which causes a blue-shift together with an amplitude decrease and a narrowing of the band. In addition, the kinetics of plasma-induced modifications can be easily controlled by varying the applied bias voltage. Therefore, plasma annealing could emerge as an efficient alternative to more traditional thermal annealing treatments for tuning the plasmonic properties of noble metal nanoclusters with great flexibility.

Real-time surface differential reflectance spectroscopy in the visible range is used to study the optical response of silver nanoclusters, prepared by magnetron sputtering deposition, during cyclic treatments in different oxygen atmospheres and low-energy bias argon plasma. Changes in the reflectance show that the exposure to non-ionized (or partially ionized) oxygen causes a red-shift and damping (or complete vanishing) of the resonance, while bias plasma annealing induces the opposite effects, due to oxygen desorption and structural reshaping of the nanoclusters. These results open up new opportunities for developing plasmon-based devices with high tunability of the surface plasmon resonance (energy, width and amplitude) due to an interplay between morphological and chemical modifications of the nanoclusters.

Surface differential reflectance spectroscopy (SDRS), an optical characterization technique, is sensitive enough to observe the minute changes in the surface plasmon resonance (SPR) of noble metal nanoparticles (NPs). This SPR, which causes a sharp absorption of light in the visible range, is extremely sensitive not only to the morphology and organization of the NPs, but also to the chemical atmosphere surrounding them. Hence, taking SPR as a signature phenomenon, we have studied the reactivity of Ag NPs using a dedicated in situ SDRS set-up mounted on a magnetron sputtering machine. Real-time optical characterizations were possible not only during the deposition of Ag NPs, but also during their exposure to gases such as O-2, N-2, Ar, either non-ionized or partially ionized. This optical study reveals that Ag NPs are reactive to non-ionized O-2 exposure, which induces modifications in the SPR characteristics (width, amplitude and position of the absorption band) in contrast to N-2 and Ar. Moreover, this study also evidences a complete disappearance of the SPR when Ag NPs are exposed to partially ionized oxygen species O-2((+)) as well as a significant reactivity of the NPs exposed to N-2((+)), while Ar remains non-reactive in both non-ionized and partially ionized forms.

In situ and real time surface differential reflectance (SDR) spectroscopy is employed to study the growth of metallic Ag and/or dielectric Si3N4 films during deposition by magnetron sputtering. The measurements during Si3N4 sputtering allow determining both the refractive index and the deposition rate. During Ag sputtering, the SDR presents a maximum in the visible range, typical of a surface plasmon resonance (SPR) indicating the 3D growth of silver nanoclusters. After a certain deposition thickness, the SDR change corresponds to a continuous layer growth and allows determining the Ag deposition rate. During Ag/Si3N4 alternate deposition, the SDR spectroscopy enables to follow the SPR modifications (position, amplitude and width) not only during the formation of the Ag nanoclusters but also during their capping by a Si3N4 matrix and during intermediate steps (holding time after the silver sputtering, Si3N4 target ignition and pre-sputtering before the Si3N4 deposition) where significant changes are detected. It suggests possible nanocluster reshaping or physicochemical processes occurring at the nanocluster interface during the different steps.