To improve the processes employed for preparing single crystals with fixed electrophysical properties it is necessary to have information about the coefficients of diffusion of the impurities present in the melts. In this paper data on the diffusion of Fe, Co, and Ni in liquid germanium, starting from its melting point up to 1380/degree/K, are presented. The coefficients of diffusion of Fe, Co, and Ni in liquid Ge were determined by the capillary method. It was established that the change in the structure of liquid helium as a function of the temperature is responsible for the characteristic features of diffusion in the systems studied.

Experiments are performed which show that the rate of germanium dissolution in Bi-Te alloys with tellurium contents of 0, 20, 40, 60, 80, and 100 at.% is limited by mass transfer and is described by a physicochemical hydrodynamic equation. The concentration dependence of the Ge dissolution rate in liquid Bi-Te allows is shown. Dissolution was shown to be diffusion controlled. The parameters of Ge dissolution and diffusion in Bi-Te alloys were determined.

The kinetics of dissolution of Cu, Mo, Ta, Si, GaAs, and ZnTe in liquid Te was investigated. It was found that the rate of dissolution of all the elements in liquid tellurium is limited by mass transfer in the molten solvent and is well-described a physicochemical, hydrodynamic equation which is presented. The destruction of the crystal lattice of the soluble samples and the formation of new bonds with the solvent take place relatively faster than the mass transport in liquid tellurium. The parameters for the dissolution and diffusion are determined.