We report the development of large 50 mm diameter free standing wafers of GaN. GaN layers up to 350 mum thick have been grown by HVPE on lattice-matched LiAlO2 substrates. The original oxide substrates were removed by wet chemical etching, and the defect structure of the GaN wafers has been investigated. The issue of stacking faults vs. polar inversion domains has been resolved in favor of ABABACAC stacking sequences. A UV-emitting LED (368 nm) has been developed on these substrates, using molecular beam epitaxy.
Y. Fedyunin合作论文数1DW Hill合作论文数1BH Chai合作论文数1MMC Chou合作论文数1JJ Gallagher合作论文数1Richard Vanfleet合作论文数1
Anirban Bhattacharyya合作论文数1Maruska, H.P.合作论文数1Ian Friel合作论文数1
Theodore D Moustakas合作论文数Department of Electrical and Computer Engineering, College of Engineering, Boston University1Tai-Chou Chen合作论文数1J. S. Cabalu合作论文数1
A. A. Allerman合作论文数Advanced Electronic and Optoelectronic Materials Department, Sandia National Laboratories1
