Since the successful exfoliation of two-dimensional (2D) magnetic CrI3 film, an increasing interest of research is the 2D analog of fascinating physical property of 3D material, of which the most attractive for both fundamental research and practical applications is the achieving effective magnetoelectric coupling and manipulation in 2D van der Waals (vdW) multiferroic heterostructure (HS). Herein, we report the discovery of ferroelectrically tunable orbital reconstruction in alpha-RuCl3/CuInP2S6 2D vdW HSs, enabling the remarkable transitions of magnetic ordering from proximate quantum spin-liquid state to ferromagnetic as well as the easy magnetization axis tuning from in-plane to out-of-plane direction. In addition, Monte Carlo simulation verified that, alpha-RuCl3 would transform into a perpendicular ferromagnetic material with Curie temperature of 89 K when the ferroelectric polarization points to alpha-RuCl3. Furthermore, by analyzing the density of states and the d-orbital-resolved magnetocrystalline anisotropy energy (MAE) of Ru atoms based on the second-order perturbation theory we elucidate that the contribution to MAE from the spin-orbit coupling interaction between d orbitals of Ru atoms show a transition from positive to negative, and ultimately dominating the MAE variation from easy-plane to easy-axis magnetization upon the reversible FE polarization. Therefore, the CuInP2S6 nonvolatile ferroelectric switching enables the nonvolatile electrical control of magnetic ordering and anisotropy. This work paves the way for exploring high-efficiency nanodevices and nonvolatile information storage based on the multiferroic 2D vdW HSs.

Energy-efficient and environment-friendly solid-state magnetic refrigeration requires materials with extraordinary magnetocaloric properties. We report the plateau-like magnetocaloric effect activated by tripled magnetic cell in layered intermetallic TbMn2-xCoxSi2 compounds, and the consequent large refrigerant capacity. Substitution of Mn with Co significantly modified the magnetic properties evidenced by two successive ferromagnetic first-order transitions and strong magneto-elasticity as well as significant contraction of the unit cell. Detailed neutron diffraction investigations have established the formation of a tripled magnetic unit cell structure at the temperature range between two magnetic transitions. The overlapping entropy curves near the two transition temperatures results in a plateau-like magnetocaloric effect and enhanced refrigerant capacity. Existence of this special magnetic cell also leads to a variety of interesting physical properties, including a significant drop in resistance and pronounced anomalies in the heat capacity, as well as different responses of the two transition temperatures to an applied magnetic field. The impact of the formation of a tripled magnetic cell on the physical properties is highly unusual for magnetic alloys and merits expanded investigation of this class of magnetic materials to explore for novel applications.

Preeclampsia (PE) is a pregnancy-specific complication and it is related to insufficient extravillous trophoblast invasion. To date, the pathophysiology of PE has not yet been fully elucidated. Response gene to complement 32 (RGC32) is a novel cellular protein, and it plays important roles in the regulation of cell differentiation, angiogenesis, migration, and invasion. This study aimed to determine the RGC32 expression and function in human placentas and to explore the underlying mechanisms.RGC32 expression in term placentas collected after cesarean section from pregnant women with PE and normal pregnant women was determined by real-time reverse transcriptase polymerase chain reaction (RT-PCR), Western blot, and immunohistochemistry. The effects of RGC32 expression on trophoblast invasion, migration, and the underlying mechanisms were studied in HTR8/SVneo cells.The messenger RNA (mRNA) and protein levels of RGC32 were significantly downregulated in preeclamptic placentas compared with normal controls (P < 0.05). RGC32 silencing significantly inhibited HTR8/SVneo cell migration and invasion (P < 0.001, respectively). These effects were associated with decreased activities and expression of matrix metalloproteinase (MMP)-2/9, and with the reduced phosphorylation level of Akt.RGC32 may play important roles in the pathophysiology of PE by directly affecting the invasion/migration of trophoblast.

Wurtzite ZnO thin films with different epitaxial relationships have been grown on (0 0 1)-, (0 1 1)-, and (1 1 1)LaAlO3 (LAO) single-crystal substrates by pulsed laser deposition. Nonpolar (1 1 2¯ 0)ZnO films with two orthogonal domains were obtained on (0 0 1) LAO, in which the in-plane orientation relationship is demonstrated to be 〈0 0 0 1〉ZnO//〈1 1 0〉LAO. For ZnO on (0 1 1)- and (1 1 1)LAO substrates, a single-domain epitaxy with c axial orientation is observed, in which the in-plane relationships were 〈1 1¯ 0 0〉ZnO//〈0 1 1¯〉LAO irrespective of the substrate orientations. Based on the in-plane orientation relationship, the lattice mismatch has been obtained for these three oriented ZnO/LAO heterointerfaces.

In this paper, high-k hafnium–aluminum oxide (HAO) films were synthesized by the sol–gel technique. The effects of the ratio of Hf and Al on the properties of the HAO films were investigated thoroughly. The average optical transmittance of the HAO films was above 88% within the visible light range and Al incorporation in HfO_2 can enlarge the band gap of HAO films. X-ray diffraction (XRD) results showed that Al additive can suppress the crystallization of HfO_2 and the HAO films were amorphous in structure. The refractive index of HAO films can be modulated with the ratio of Hf and Al in the HAO films. The HAO films with the ratio of Hf and Al = 2:1 obtained excellent performance including the root mean square (RMS) roughness of 0.26 nm, the relative permittivity of 12.1, the leakage current density of 1.69 × 10^−7 A/cm^2 at 2 MV/cm, and the etching rate in dilute HF solution less than 1 nm/s.

Epitaxial ZnO thin films were grown on SrTiO3:Nb (NSTO) substrates by pulsed laser deposition. The NSTO/ZnO heterojunctions exhibit a typical rectification characteristic under a small voltage, while two attendant behaviors of bipolar resistive switching and negative differential resistance appear under a large voltage. The NSTO/ZnO heterojunctions show extremely weak resistance switching hysteresis without applying a forward bias. However, when the forward bias increases to some extent, the hysteresis becomes more and more prominent and negative differential resistance gradually appears. Furthermore, the high resistance state is obtained when sweeping from negative to positive voltage bias, and vice versa. We propose a model for these behaviors at NSTO/ZnO interface, in which the space charge region in ZnO is wide in high resistance state when the interface state is unoccupied, while the space charge region becomes narrower in low resistance state due to Fermi pinning when the interface state is completely occupied, and the low resistance state is remained until electrons are detrapped from the interface state.

Journal of the Society for Information DisplayVolume 8, Issue 1 p. 1-1 Introduction Andras I. Lakatos, Andras I. Lakatos EditorSearch for more papers by this author Andras I. Lakatos, Andras I. Lakatos EditorSearch for more papers by this author First published: 18 June 2012 https://doi.org/10.1889/1.1828693Citations: 12AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL No abstract is available for this article.Citing Literature Volume8, Issue1March 2000Pages 1-1 RelatedInformation

Fabrication of suitable thin film tran- sistors (TFTs) with a process compatible with the panel substrate materials is one of the key technologies that have to be established for the manufacturing of high-end active OLED dis- plays. This work has developed a low temperature process for fabrication of poly-Si TFT on glass substrates based on a metal induced crystallization method for converting a- Si to poly-Si. Both p-channel and n-channel TFTs are obtained with high carrier mobility, low threshold volatage, large on/off current ratio and low off state leakage. The TFTs are suitable for driving OLED displays.