Embryonic stem cells (ESCs) exhibit a metabolic preference for glycolysis over oxidative phosphorylation to meet their substantial adenosine triphosphate (ATP) demands during self-renewal. This metabolic choice inherently maintains low mitochondrial activity and minimal reactive oxygen species (ROS) generation. Nonetheless, the intricate molecular mechanisms governing the restraint of ROS production and the mitigation of cellular damage remain incompletely elucidated. In this study, we reveal the pivotal role of RNA-binding motif protein 46 (RBM46) in ESCs, acting as a direct post transcriptional regulator of ROS levels by modulating BCL2/adenovirus E1B 19 kDa protein-interacting protein 3 (Bnip3) mRNA expression. Rbm46 knockout lead to diminished mitochondrial autophagy, culminating in elevated ROS within ESCs, disrupting the delicate balance required for healthy self-renewal. These findings provide insights into a novel mechanism governing ROS regulation in ESCs.

In order to stabilize the coupling efficiency of the laser beam from the semiconductor laser through optical fiber,a laser with groove structure was proposed,and the laser beam,coupling efficiency and P-I characteristics were researched.The periodic grooves in the ridge region of the laser were etched to improve the gain distribution in the active region of the laser.The laser beams of the common laser and the groove structure laser were analyzed,the coupling efficiency and P-I characteristics were tested.The results show that the strip laser with groove structure can stabilize the cavity mode,avoid the "Kink" effect and improve the coupling efficiency to 97.7％.The laser with groove structure can solve the phenomenon of optical filaments fluctuation effectively and improve the stability coupling efficiency of the beam.

采用大光腔结构、真空解理镀膜、腔面非注入区技术制备了980 nm单发光条大功率半导体激光器,其连续输出功率达到12 W.封装后测试,对于同一批量的180只器件进行可靠性测试,经过64h电老化测试分析,功率基本未发生变化72只,综合成品率达到40％.对失效器件进行综合分析可得,此次试验中,镀膜后分离时产生的膜撕裂是激光器失效的主要原因.

A multiple quantum wells edge-emitting semiconductor laser which can generate twin ultra-narrow,stable and symmetrical beams in the far field vertical direction was designed and fabricated.The Bragg reflection waveguide structure was designed on both side of the active layer.Laser with 100μm stripe width exhibited two stable near-circular beams symmetrically located at about±33.4°with full-width at half maximum of 7.2°in the vertical direction.Texting the laser after coating,which showed an output power of 1.40 W under continuous wave operation and 2.26 Win pulsed mode.The characteristic temperature of the device is about 91 K.

For 980 nm high-power semiconductor lasers,suitable reflectivity coefficient of cavity surface films of lasers have been designed.Three kinds of AR-coatings for 980 nm high power semiconductor laser were designed and pre-pared,the reflectivities of AR-coatings are respectively 8%,5% and 2%,while the reflectivities of HR-coatings are all above 90%.After packaging,luminescence properties of the semiconductor lasers were tested.Compared with non coated laser,output power of the coated laser increased by 35.18%-37.35%when the input current is 15 A,and the conversion efficiency increased by 25.33%~27.44% at their optimum operating point.When the reflectivity of HR-coatings of high power semiconductor laser is constant,the input current value of the optimum operating point is in-versely proportional to the reflectivity of HR-coatings.The experimental results show that the semiconductor laser with reasonable cavity surface film can have greater current value at optimum operating point,and this optimized semicon-ductor laser is suitable for high power operation.

Studied are the optical characteristics of SiO2 film based on Si(100)fabricated by electron beam evaporation with IBAD(ion beam assisted deposition) and without IBAD under different process conditions.It is found that,for surface morphology,refractive index uniformity and moisture stability,the films fabricated by electron beam evaporation with IBAD are better than the films processed without IBA,and in the temperature range of 40～160 ℃,the refractive index of SiO2 optical films is improved with substrate temperature increasing.When the pressure is 1.5×10-3 Pa,the deposition rate is 5 nm/s,the drive voltage of ion source is 285.4 V and the ratio of ion source PAr∶PO2=1∶1,SiO2 optical films obtain best optical characteristics.