Atomically precise metal clusters, characterized by their well-defined structures, have emerged as a versatile platform for energy, catalysis, and biomedicine. Building upon this foundation, the biocatalytic clusterzymes, a class of artificial enzymes with atomic-level programmable activity and renal-excreted properties, have successfully overcome the stability limitations of natural enzymes and biosafety concerns of conventional nanomaterials. This review systematically examines the synthesis, engineering principles, and applications of this programmable platform. First an in-depth analysis of the strategies is provided for programming biocatalytic or enzyme-like activity of metal clusters via atomic and ligand engineering. Meanwhile, infrared emissive metal clusters with tunable electronic structure and optical properties at the atomic level allow to achieve the pathological progression and clinical 3D visualization in deep tissue. Furthermore, semiconductor gold clusters with rich electron carriers can enhance the interface charge transfer between the metal electrode and surface molecular clusters, achieving highly sensitive neuron recording for an efficient brain computer interface. The clusters demonstrate great potential in neuroscience, including neuroinflammation, bioimaging, and neuromodulation. Finally, future challenges are outlined for the rational design and translational development of this programmable platform, poised to address complex challenges in biomedicine.

As a typical two-dimensional transition metal disulfide compound, MoS2 shows great potential for applications in electronic and optoelectronic devices due to its unique electronic, optical and mechanical properties. Therefore, the preparation of wafer-scale MoS2 has become cutting-ledge research to optimize the performance of electronic devices. Epitaxial growth technology is a key method to prepare high-quality, large-area single-crystal MoS2 films. This paper reviews the research progress of MoS2 epitaxial growth in recent years, focusing on substrate selection, lattice orientation control, and the application of epitaxial growth technology in the preparation of MoS2 films. By systematically analyzing the epitaxial growth of MoS2 on different substrates, the effects of lattice matching, interfacial interactions, and growth kinetics during the epitaxial growth process are summarized, as well as introducing two novel epitaxy methods, remote epitaxial growth and gold stencil-assisted stripping techniques. Finally, the future development direction of MoS2 epitaxial growth technology and its application prospect in optoelectronic devices are envisioned.

Pyrene has demonstrated outstanding potential in perovskite photovoltaics, both as a building block in self-assembled monolayers (SAMs) and as a core component in traditional hole-transport materials (HTMs). Its rigid planar structure and strong pi-conjugation enhance charge transport, molecular order, and interfacial stability. However, current designs remain constrained to simple substitution strategies, limiting further performance gains. To address this, we integrate pyrene with high-mobility carbazole units through two tailored architectures: a fused rigid system (4PAPyCz) and a flexibly linked twisted system (Py-4PACz). While the rigid design leads to excessive aggregation, the flexible Py-4PACz optimizes molecular orientation and allows pyrene to function as an interfacial strain buffer, significantly reducing nonradiative loss. As a result, inverted perovskite solar cells based on Py-4PACz achieve over 25% efficiency and exceptional operational stability, retaining >91.2% efficiency after 700 h of maximum power point tracking, and >90% following the stringent ISOS-L-3 damp-heat protocol. This work provides a rational design strategy to unlock the multifunctional potential of pyrene-based materials for efficient and stable photovoltaics.

Lead-free all-inorganic Mn(II)-based perovskite nanocrystals, featuring low toxicity and broadband emission, serve as ideal candidates for white light-emitting diodes (WLEDs) and anti-counterfeiting devices. However, their practical applications are severely restricted by the relatively low photoluminescence quantum yield (PLQY). Herein, a Ce3+ doping strategy was adopted in this work to modulate the optical properties of two types of Mn (II)-based perovskite nanocrystals, namely CsMnCl3 with a trimeric chain structure and Cs2MnCl4 with a layered structure. By partially substituting Mn2+ with Ce3+ ions, the surface defects of the nanocrystals are effectively passivated, resulting in a remarkable enhancement in PLQY. Specifically, the PLQY of green-emitting Cs2MnCl4 nanocrystals increases from 26.70% to 67.14%, while that of red-emitting CsMnCl3 nanocrystals rises from 36.38% to 68.19%. A WLED device is fabricated by integrating the two Ce3+-doped nanocrystals with a 460 nm blue LED chip and exhibits a chromaticity coordinate of (0.332, 0.334), which is highly close to that of standard white light, with a correlated color temperature of 5978 K and a high color rendering index of 87.6. The excitation-dependent photoluminescent properties further endow them with the potential in anti-counterfeiting. This work provides an effective defect-passivation strategy for Mn(II)-based perovskite nanocrystals, paving the way in solid-state lighting and anti-counterfeiting technologies.

Nonpolar a-plane GaN with improved crystal quality and surface morphology was achieved via secondary epitaxy lateral overgrowth on GaN templates patterned with SiO2 stripes oriented along the [1-100] (m-axis) direction. Secondary epitaxy was conducted on stripe templates with two different width-to-spacing ratios. Results indicated that the V/III ratio significantly affected the morphology of the nucleation layer. On-axis X-ray diffraction results revealed that a-plane GaN films whose nucleation-layer morphology reflects the underlying crystal microstructure exhibited higher crystal quality, with the best XRC-FWHM values were 316 arcsec along the c-axis and 377 arcsec along the m-axis, respectively. Basal plane stacking fault densities were quantified through a modified Williamson-Hall analysis, decreasing to a minimum of 6.62 x 10(3) cm(-1). This defects reduction is attributed to grain boundary formation during coalescence, which suppresses defects propagation and yields low-defect Ga-face wing regions. Furthermore, Raman spectroscopy results demonstrated that wider stripes effectively relax the strain in a-plane GaN films. This work establishes a viable pathway towards achieving smooth, low-defect nonpolar GaN, providing insights for the development of QCSE-free devices.

A comprehensive understanding and effective suppression of dark current in near-infrared organic photodiodes (NIR-OPDs) are crucial for enhancing their detectability, a topic that remains a persistent challenge in this field. Herein, the origins of dark current in NIR photodetectors from the perspective of carrier dynamics is elucidated. Building on this analysis, an interface engineering-based solution targeting undesirable carrier transport and collection is proposed: a wide-band gap, highly biocompatible anode interfacial layer (D149:CoOx) with bidirectional carrier barriers. Its modestly deeper highest occupied molecular orbital blocks thermally activated holes, while the shallower lowest unoccupied molecular orbital impedes electron injection from external circuits, collectively suppressing the dark current of the NIR-OPD (active layer: PTB7-Th:TQPP2FIC). Compared to conventional PEDOT:PSS, D149:CoOx achieves effective dark current suppression without compromising responsivity (0.17/0.23 A W-1 @ PEDOT:PSS/D149:CoOx-OPD), synergistically enabling a specific detectivity of 1012 Jones at -1 V. Furthermore, featuring a lower dark current of ∼ 3 × 10-9 A cm-2 (20× lower than PEDOT:PSS at ∼ 6 × 10-8 A cm-2), the flexible D149:CoOx NIR-OPD is capable of real-time human heart rate monitoring. This work establishes design principles for low-noise NIR devices while demonstrating significant prospects in wearable NIR optoelectronics.

Currently, most hydrogel sensors are single-layer structures, and the current may be potentially harmful to humans. Finding a suitable isolation layer is the key to solving this problem. However, the mismatch of mechanical properties between the isolation layer and the hydrogel sensor may affect the sensing accuracy. In this regard, the two-layer hydrogel sensor consists of a nonconductive layer and a conductive layer. The nonconductive layer is adhesive and tough, which protects the body from the leakage current. We designed and synthesized a nonconductive layer consisting of polyacrylamide (PAM) and PNIPAM for direct skin contact and a conductive layer consisting of PAM, polyethylenimine (PEI), and lithium chloride for conducting current and sensing strain. Sodium caseinate was added to the nonconductive layer to enhance adhesion. The hydrogel has a two-layer structure with a large difference in electrical conductivity. When a voltage is applied, the two-layer hydrogel protects the skin from irritation and damage. More importantly, the mechanical properties of the two layers are close to each other, enabling the bilayer hydrogel to detect the strain effectively. The bilayer hydrogel sensor also has a sensitive response over a wide temperature range. This unique strategy provides valuable inspiration for the development of fast-response and skin-protected hydrogel strain sensors.

Metasurface structural colors deliver ultrahigh resolution and outstanding photostability, but their optical response is permanently fixed once fabricated, creating a fundamental limitation for dynamic applications. We propose an optically tunable color display by integrating patterned quantum dot photoresists with dielectric metasurfaces. The metasurfaces serve as static color templates arising from geometry-dependent Mie resonances, while quantum dot photoresists provide switchable photoluminescence under ultraviolet excitation, enabling color tuning via spectral superposition. Both simulations and experiments validate the reversible dynamic structural color scheme, including color modulation and continuous gamut tuning. Furthermore, a proof-of-concept dynamic quick-response code is demonstrated for reversible information encryption, offering a promising pathway for next-generation dynamic metasurface devices.

Owing to their exceptional tunability and reconfigurability, three-dimensional (3D) nanostructured functional devices based on phase change materials (PCMs) will become increasingly important in fields such as multilevel optical elements. The conventional fabrication method involves multiple alignment and overlay steps to etch the functional 3D structures layer by layer. However, with the increasing complexity of device structures and the demand for higher fabrication efficiency, there is an urgent need for a more precise, flexible, and simpler fabrication method. In this study, based on laser heat-mode lithography, a fabrication method for functional nanoscale structures based on the PCMs is proposed that does not require overlay or pattern transfer. Furthermore, an analytical process model was established to determine the relationship among the height of the fabricated 3D nanoscale structures, exposure dose, and development time. The fitted surface matches the experimental results. Exposure and development strategies are designed using this model. Subsequently, microstep-like structures featuring a maximum of 22 steps and a precision of 10 nm were successfully fabricated. The experimental results are in good agreement with the design. The fabrication accuracy was further optimized based on the preliminary results. We introduced an innovative multidimensional control strategy that employs the exposure dose for coarse regulation and exposure repetitions for fine regulation. This approach resulted in a reduction of 8.48 nm in the root-mean-square error (RMSE) and 30.54% in the coefficient of deviation (CV b ), respectively. Finally, a series of potentially functional 3D nanostructures for multilevel optical elements based on PCMs was successfully fabricated. Furthermore, the application prospects of this fabrication method in data storage were discussed. The fabrication results demonstrate that this simple and efficient 3D structuring method exhibits significant application potential for high-end customized nanodevices in advanced fields such as dynamic imaging and data storage.

ABSTRACT Perovskite solar cells (PSCs) hold significant promise as the next‐generation photovoltaic technology with the certified power conversion efficiency already surpassing 27%. To further enhance device stability to meet industrial demands, it is crucial to develop high‐performance charge‐selective materials (CSMs) as they profoundly affect interfacial charge carrier dynamics and the stability of interface structure. Conventional organic CSMs often employ building blocks with a single electronic effect (e.g., using electron‐donating units to construct hole‐selective materials (HSMs) and electron‐withdrawing groups to develop electron‐selective materials (ESMs)), which usually face the dilemma that high charge transport ability, superior film morphology, and strong interfacial functionality cannot be achieved simultaneously. In contrast, donor(D)–acceptor(A) CSMs allow more precise tuning of molecular structure, aggregation behavior, electronic properties, and interfacial functionalities, thus providing an ideal design platform for exploration of efficient CSMs. Therefore, this review timely summarizes the progress of D–A type CSMs, covering both HSMs and ESMs. Specifically, we will deeply explore the relationships between molecular structures and material properties, as well as their effects on device performance and stability. Finally, future research directions in material design are proposed to advance the industrialization of PSCs.

Abstract In recent years, micro-LEDs have garnered widespread attention as core devices for next-generation display technology. As device dimensions are scaled down to the micrometer range, however, sidewall damage introduced by dry etching has become a critical bottleneck limiting their optoelectronic performance. In this study, InGaN-based micro-LEDs ranging in size from 1 μm to 5 μm were fabricated, and the effects of TMAH sidewall treatment on their optoelectronic characteristics were systematically investigated. The study found that TMAH treatment significantly enhanced the peak wall-plug efficiency (WPE), with an increment exceeding 100% for 1 μm and 2 μm micro-LEDs. Meanwhile, the reverse-biased leakage current of all devices is decreased by approximately one order of magnitude. Electroluminescence (EL) spectra further revealed a pronounced superlattice (SL) emission peak after TMAH chemical treatment, verifying the improved longitudinal current spreading. These findings validate the effectiveness of TMAH sidewall treatment in high-performance micro-LED fabrication.

All inorganic perovskites have emerged as attractive light-harvesting materials for perovskite solar cells due to their superior thermal and photostability. However, the significant performance gap between lab-scale cells and large-area modules remains a major challenge for commercialization. Here, we introduced an anisotropically engineered hole transport material, 2 ',7 '-bis(3,6-dimethoxy-9H-carbazol-9-yl)-N2,N2,N7,N7-tetrakis(4-methoxyphenyl)-9,9 '-spirobi[fluorene]-2,7-diamine (SF-MPA-MCz), which exhibited stronger interfacial adsorption and improved energy-level alignment with CsPbI3 and formed a uniform and robust hole transport layer, which enhanced both efficiency and stability. As a result, CsPbI3-based devices achieved power conversion efficiencies (PCE) of 20.0% in 0.16 cm2 single cells and 16.7% in 186 cm2 modules, representing the narrowest cell-to-module PCE gap reported for inorganic PSCs. Moreover, the enhanced interfacial coupling between SF-MPA-MCz and CsPbI3 effectively suppressed thermal degradation and ion migration, thereby improving device durability. The encapsulated module maintained 80% of its initial PCE after 1500 h of damp-heat testing (i.e., at 85 degrees C and in 85% R. H. air) and retained 80% of its initial PCE after 4000 h of operation under continuous 1-sun illumination at 40 degrees C.

The migration of iodide ions and the inefficient interfacial charge transport continue to pose significant challenges to power conversion efficiency (PCE) and stability of perovskite solar cells (PSCs). In this study, we innovatively introduce a multifunctional passivation method that involves doping the P-type material 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) into the fullerene derivative (6,6)-Phenyl C-71-butyric acid methyl ester (PC71BM). The introduction of F4TCNQ not only enhances the ability of PC71BM to passivate uncoordinated Pb2+ ions but also promotes a uniform distribution of the passivation layer. Results indicate that this passivation layer effectively immobilizes iodide ions, preventing their random movement within the PVK films and reducing iodine-related defects. Additionally, by raising the Fermi level and enhancing the P-type characteristics, it improves hole extraction and transport, thereby reducing nonradiative recombination in the target device. Consequently, the n-i-p PSCs with the mixed passivation layer achieved a champion PCE of 25.87%, with a higher open-circuit voltage (1.182 V) and a remarkable fill factor (84.64%). Notably, in large-scale manufacturing, n-i-p mini-modules reached a commendable PCE of 22.34%. Furthermore, these devices demonstrated superior stability, maintaining over 95% of their initial efficiency after 900 h of maximum power point (MPP) tracking under ISOS-L-1 standards.

Tin perovskite solar cells (TPSCs) are considered a promising and environmentally friendly alternative to lead-based perovskite photovoltaic devices. However, the uncontrollable crystallization kinetics of tin-based perovskite often led to defective films, limiting the efficiency and stability of TPSCs. Herein, a dual-functional 3-furoic acid (3-FA) is introduced as a crystallization modulator to decouple the nucleation and crystal-growth processes. By coordinating with tin iodide (SnI2) and simultaneously forming hydrogen bonds with formamidinium iodide (FAI), 3-FA facilitates the formation of large-size precursor complexes. These unique complexes effectively promote uniform, high-density nucleation while enabling subsequent ordered perovskite crystal growth. The resulting high-quality films exhibit enhanced crystallinity, highly uniform morphology, and a substantially reduced defect density. As a result, the 3-FA modified devices exhibit simultaneous enhancements of open-circuit voltage (V OC) and fill factor (FF), leading to a champion power conversion efficiency (PCE) of 16.16%. Furthermore, the devices demonstrate markedly improved thermal stability, retaining over 80% of their initial efficiency after 1150 h of aging at 60 degrees C under a nitrogen atmosphere. This work provides a strategy that separates nucleation from crystal growth to overcome the longstanding challenge of crystallization control in tin-based perovskites.

A submicron-scale patterning strategy using Ge10Sb90 (GS) heat-mode resist and S1813 g-line photoresist via a two-step plasma etching process was proposed and systematically investigated in this paper. GS heat-mode resist film defined the submicron-scale patterns, and then the designed structures were successfully transferred into the S1813 photoresist layer, enabling feature sizes smaller than the diffraction limit of the direct laser writing system and the resolution of g-line photoresists. The etching mechanism of the GS/S1813 dual-layer resist structure in the oxygen plasma has been elucidated through X-ray photoelectron spectroscopy. Experimental results revealed that an oxidized denser layer formed on GS surfaces possesses a strong etch-resistance. Under the optimized silicon etching conditions, a grating structure with a critical dimension of 256 nm and an aspect ratio of up to 4.68:1 has been achieved on silicon substrates. This complementary patterning strategy combines the advantages of both the photoresist and heat-mode resist, providing an effective and low-cost method for the preparation of high-resolution and high aspect-ratio silicon-based devices.

Passivating surface defects is crucial for the performance of inverted perovskite solar cells (PSCs). Single molecules struggle to passivate multiple perovskite surface defects, significantly limiting the performance of perovskite solar cells. Here, we report a bimolecular synergistic passivation strategy combining propane-1,3-diamine dihydroiodate (PDADI) and 11-mercaptoundecanoic acid (MUA) to achieve a complementary passivation effect. PDADI provides efficient field-effect passivation and halide vacancy filling, while MUA further chemically passivates defects through its strong coordinating groups (-SH/-COOH). This synergistic effect reduces the trap-state density from 3.00 & times; 1015 to 1.65 & times; 1015 cm-3, and also modulates the perovskite energy level. The champion device with the synergistic passivation achieves an efficiency of 26.15 % with long-term stability (maintained the initial efficiency of 90 % after 1000 and 200 h under ISOS-D-1 and ISOS-L-3). This work provides an effective approach for designing high-performance, highly stable perovskite solar cells through synergistic passivation.

Nano-scale through-silicon vias (n-TSVs) plays the key role in connecting the active front-side of devices and the backside power delivery network (BS-PDN) in the three-dimensional integrated circuit (3D IC). High-quality Cu filling is the most important in the n-TSVs fabrication. As the diameter decreases and the aspect ratio (AR) increases, the challenges associated with seed layer deposition, surface pre-wetting, and electrochemical deposition (ECD) will intensify. In this study, the electron beam induced deposition (EBID) method has been first proposed to deposit the seed layer for high-AR n-TSVs. Additionally, isopropanol pre-wetting is proposed to enhance surface wettability, thereby eliminating air bubbles within the via and ensuring complete filling of the electrolyte. Finally, the effect of electrolyte additives and current density on the ECD process have also been extensively investigated. The thickness of seed layer deposited by EBID exhibits high step coverage, uniformity and continuity at the top and the bottom of via. Meanwhile, the wettability of seed layer surface treated by isopropanol has been greatly increased. During the ECD process, the deposition rate of Cu is main affected by the suppressor. Besides, the current density should be chosen within a moderate value (>= 0.03 A/dm2 and <= 0.3 A/ dm2), which can increase the deposition rate and avoid the premature closing of the via opening. With the optimized processes above, the n-TSVs of Type-I (440-nm-diameter and 4.81:1-AR) and Type-II (150-nmdiameter and 9.25:1-AR) have been conformally filled without voids and breaks.

Accounting for over one-third of global energy use, buildings face a rapidly rising cooling demand driven by expanding floor areas and extensive air-conditioning, making them a major source of global energy consumption and carbon emissions. Radiative cooling (RC) materials offer a promising route to address the conflict between global decarbonization goals and energy-intensive cooling demands through zero-energy, eco-friendly building temperature regulation. However, their practical adoption is still hindered by the unique functional demands of different building components. To address these site-specific requirements, natural organisms guide the rapid development of bioinspired RC materials. Herein, we review recent advances in bioinspired RC materials for building energy savings spanning from material design to practical applications. First, we discuss the design of static and dynamic RC materials from the perspective of bioinspired structural design and material selection. Then, we introduce the specific requirements of RC materials in practical building applications, such as mechanical durability and self-cleaning capability for roofs, angle-selective design and thermal insulation for walls, and transparency and adaptability for windows. Next, we summarize the performance assessment of RC materials, covering both basic optical metrics and building-specific evaluations. Later, we present the discovery and structural design of RC materials driven by machine learning. Finally, we outline the path forward for RC materials, such as intelligent integration with other cooling methods, addressing the key challenges and prospects for their real-world building applications.