We report the results of gamma radiation testing of the performance of 1064 nm packaged butterfly single mode DFB lasers (QD Laser QLD1061) for satellite and space applications. Both passive and active tests were conducted, with measurements of output power, optical signal-to-noise-ratio (OSNR), output spectra, and polarization extinction ratio (PER) as a function of dose rates and total radiation exposure. No significant changes in laser behavior were observed for total doses up to 100 kRad.

Semiconductor DFB (Distributed feedback) laser diodes with an operating wavelength of 1064 nm, which is suitable for pulse-on-demand fiber laser, have been developed. The stable performance of CW and nanosecond/picosecond pulsed operation is reviewed. By applying gain-switching operation with a simple direct modulation technique, 50-ps pulse generation with a stable spectral single-mode property was obtained. For the efficient amplification of the obtained 50-ps pulse, a monolithic semiconductor optical amplifier (SOA) was integrated into the DFB lasers. An improved peak power of 300 mW at 50-ps pulse was observed with limited optical noise injection when the synchronous modulation technique of the DFB and the SOA was employed. Short cavity lasers showed a high-frequency response compared to the original DFB lasers and achieved a short pulse width of 13 ps by standard gain-switched operation.

1240-nm quantum-dot (QD) distributed-feedback (DFB) lasers are developed for the optical time-domain reflectometer. Fabricated DFB lasers with high-density QDs show excellent temperature-stable lasing characteristics in single-longitudinal-mode operation between 0°and 70°C.

We report on newly developed high-density quantum-dot lasers that provide extremely temperature-insensitive 10.3 Gb/s operation and higher-speed operation up to 20 Gb/s which is the first demonstration in 1.3 mum quantum-dot lasers.

Temperature-insensitive 10.3-Gb/s operation under fixed driving condition was demonstrated using directly-modulated InAs/GaAs high-density quantum dot lasers, maintaining an Ethernet mask margin of 48 % up to 100 °C. 20-Gb/s direct modulation has also been demonstrated.

This paper presents a new type of CMOS time-of-flight (TOF) range image sensor using single layer gates on field oxide structure for photo conversion and charge transfer. An additional process step to create an n-type buried layer is used. This simple structure allows the realization of a high resolution array with 15 times 15 mum2 pixels in standard CMOS process. To minimize the influence of background light, the proposed pixel structure has charge draining gates. A small duty cycle optical pulse is also used for this purpose. The TOF sensor chip was successfully implemented and tested

3-D imaging systems can be used in a variety of applications such as in automobile, medicine, robot vision systems, security and so on. Recently many kinds of range finding methods have been proposed for 3-D imaging systems. This paper presents a new type of CMOS range image sensor based on the Time-of-Flight (TOF)principle with a spatial resolution of 336 × 252 (QVGA) and pixels of 15 × 15 μm2 size. A pixel structure of the sensor consists of single layer polysilicon gates on thick field oxide and has a function of background light induced charge reduction. The chip was fabricated in a 0.35 μm standard CMOS process with two poly and three metal layers. The presented sensor achieves a minimum range resolution of 2.8cm at framerate of 30fps and the resolution is improved to 4.2mm for 10 frames averaging, which corresponds to 3fps.

A novel solid-phase 3D metal-organic coordination network catalyst was prepared via self-assembly from PdCl2(CH3CN)2 and a trisphosphine hub with three flexible alkyl-chain linkers. This insoluble network complex efficiently catalyzed the Suzuki-Miyaura reaction under atmospheric conditions in water. This catalyst was reused without loss of catalytic activity.

Molybdenum- and rhenium-complexes work as affective catalysts for isomerization of a variety of cyclopropanemethanols into the corresponding tetrahydrofurans in good to high yields. The reaction may proceed via 1) [3,3]sigmatropic rearrangement involving an oxo metal cyclopropanemethanol ate accompanied by the C-C bond cleavage and 2) the metal-catalyzed intramolecular hydroalkoxylation of the initially produced homoallylic alcohols.

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Some vanadium compounds work as effective catalysts for isomerization of cyclopropanemethanols to the corresponding homoallylic alcohols. This reaction may proceed via [3,3]sigmatropic rearrangement involving an oxovanadium cyclopropanemethanolate accompanied by the C-C bond cleavage.

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A supramolecular gamma-cyclodextrin-bicapped C-60-mediated asymmetric reduction of prochiral alkyl aryl ketones using NaBH4 as a reducing reagent affords chiral sec-alcohols with moderate enantioselectivity.

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An improved system for selective aerobic oxidation of amines to imines or nitriles is presented. It involves commercially available and inexpensive copper(I) or (II) chloride as catalyst, toluene as solvent, and MS3A as dehydrating agent under an atmospheric pressure of oxygen. A variety of amines can be used as substrates for this oxidation system to give the corresponding nitriles from primary amines (up to 97% yield; TON, up to 60) and the imines from secondary amines (up to 90% yield; TON, up to 45).

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