Memristors are a promising option for achieving high-density storage and neuromorphic computing. However, the high-bias electroforming step and the sneak current arises in the crossbar array architecture impeded the further advancement of memristors. To overcome these obstacles, there is a need for in-depth research into the materials and fabrication processes of memristors. In this work, we have chosen the conventional titanium oxide as the functional layer and prepared the memristor with the structure of Pt/TiOx/Al by magnetron sputtering process. The conduction behavior of the Pt/TiOx/Al memristor is attributed to the Schottky emission. The device was an interface-type memristor with electroforming-free switching and self-rectifying effect. The conductance changes with different dynamic synaptic characteristics were demonstrated. The typical long-term potentiation (LTP) and long-term depression (LTD) were implemented by adjusting the pulse width, interval, or amplitude. The non-linearity can be adjusted by pulse parameters, and optimal non-linearity (0.167) were obtained by stepwise pulse stimulus. This study demonstrates that the Pt/TiOx/Al memristor has potential applications in high-density and efficient neuromorphic computing.

Dielectric ceramics with both excellent energy storage and optical transmittance have attracted much attention in recent years. However, the transparent Pb-free energy-storage ceramics were rare reported. In this work, we prepared transparent relaxor ferroelectric ceramics (1 - x)Bi0.5Na0.5TiO3-xNaNbO(3) (BNT-xNN) by conventional solid-state reaction method. We find the NN-doping can enhance the polarization and breakdown strength of BNT by suppressing the grain growth and restrained the reduction of Ti4+ to Ti3+. As a result, a high recoverable energy-storage density of 5.14 J/cm(3) and its energy efficiency of 79.65% are achieved in BNT-0.5NN ceramic at 286 kV/cm. Furthermore, NN-doping can promote the densification to improve the optical transmittance of BNT, rising from similar to 26% (x = 0.2) to similar to 32% (x = 0.5) in the visible light region. These characteristics demonstrate the potential application of BNT-xNN as transparent energy-storage dielectric ceramics.