Perovskite quantum dots hold great promise for quantum information processing as wavelength-tunable single photon sources operable over a broad temperature range. However, their deterministic integration into nanophotonic structures remains a major challenge limited by their random spatial distribution and nondirectional emission. In this work, we employ a two-step electron beam lithography process to deterministically place CsPbBr3 quantum dots within the mode volume of plasmonic ring microcavities. Simulations predict strong field enhancement within the cavity, boosting photon emission rates via the Purcell effect and improving the quantum efficiency of the emitters. Experimentally, coupling ensembles of CsPbBr3 quantum dots to the cavities results in a 4-fold enhancement in photoluminescence intensity and a 3-fold reduction in photoluminescence lifetime at room temperature. Single-emitter coupling is further investigated at cryogenic temperatures, leading to a 2-fold reduction in photoluminescence lifetime. These results demonstrate a potentially scalable approach for the integration of perovskite quantum dots into nanophotonic cavities and quantum photonic circuits.

Quantum key distribution (QKD) with deterministic single photon sources has been demonstrated over intercity fiber and free-space channels. The previous implementations relied mainly on polarization encoding schemes, which are susceptible to birefringence, polarization-mode dispersion and polarization-dependent loss in practical fiber networks. In contrast, time-bin encoding offers inherent robustness and has been widely adopted in mature QKD systems using weak coherent laser pulses. However, its feasibility in conjunction with a deterministic single-photon source has not yet been experimentally demonstrated. In this work, we construct a time-bin encoded QKD system employing a high-brightness quantum dot (QD) single-photon source operating at telecom wavelength. Our proof-of-concept experiment successfully demonstrates the possibility of secure key distribution over fiber link of 120 km, while maintaining extraordinary long-term stability over 6 h of continuous operation, that is highest secure key rate among the time-bin QKDs based on single-photon sources. This work provides the first experimental validation of integrating a QD single-photon source with time-bin encoding in a telecom-band QKD system. This development signifies a substantial advancement in the establishment of a robust and scalable QKD network based on solid-state single-photon technology.

The recent breakthroughs in the distribution of quantum information and high-precision time and frequency (T F) signals over long-haul optical fibre networks have transformative potential for physically secure communications, resilience of timing infrastructure (such as that supporting Global Navigation Satellite Systems (GNSS)) and fundamental physics. To date, these capabilities remain confined to isolated testbeds, with quantum and T F signals accessible, for example in Germany, to only a few institutions. In this white paper we propose the QTF Backbone: a dedicated national fibre-optic infrastructure in Germany for the networked distribution of Quantum and T F signals using dark fibres and specialised hardware. The QTF Backbone is planned as a four-phase deployment over ten years to ensure scalable, sustainable access for research institutions and industry. The concept builds on successful demonstrations of time and frequency distribution at high Technology Readiness Levels (TRLs) across Europe, including PTB–MPQ links in Germany, REFIMEVE in France, and the Italian LIFT network. The QTF Backbone will enable transformative Research and Development (R D), support a nationwide QTF ecosystem, and ensure the transition from innovation to deployment. As a national and European hub, it will position Germany and Europe at the forefront of quantum networking, as well as T F transfer.

We experimentally investigate the potential of BaMgF_4 crystals to create a continuous-wave (CW) solid state laser at the vacuum ultraviolet (VUV) wavelength of 148.4 nm via cavity-enhanced second harmonic generation. This investigation is motivated by the development of a nuclear optical clock based on a transition between the ground and isomeric state in the ^229Th nucleus. For this purpose, a BaMgF_4 crystal was grown, optically polished and periodically poled. The crystal was inserted into a power-enhancement cavity, resonant at the fundamental wavelength of 296.8 nm and the generated laser light at 148.4 nm was characterized. Within this proof-of-concept investigation, a VUV output power of typically (16±1) pW is obtained. This marks the first time that this type of crystal is used to generate VUV laser light. The experimental findings are compared to theoretical expectations and provide a clear path for future improvements.

The ability to inscribe information on single photons at high speeds is a crucial requirement for quantum applications such as quantum communication and measurement-based photonic quantum computation. Nowadays, most experimental implementations employ phase modulators in single-pass, Mach-Zehnder interferometer or Michelson interferometer configurations to encode information on photonic qubits. However, these approaches are intrinsically sensitive to environmental influences, limiting the achievable quantum error rates in practice. We report on the first demonstration of a polarization encoder for single-photon qubits based on a free-space Sagnac interferometer, showcasing inherent phase stability and overcoming previous error rate limitations. Telecom-wavelength single photons emitted by a quantum dot are modulated by the encoder under a repetition rate of 152 MHz. A quantum bit error rate of 0.69(2)

Solid-state quantum platforms have great potential as well-controllable, scalable devices for applications in quantum communication. Semiconductor quantum dots are a leading candidate for the deterministic generation of high-quality single or entangled photons. Wavelength tunability is a fundamental requirement for the interference of a large number of local emitters, enhancing their scalability. Here, we explore the strain tuning of GaAs/AlGaAs quantum dots emitting single photons close to the transitions of negatively charged Si-vacancy centers in diamonds, which are high-performance quantum memories with an efficient spin-photon interface. The emission wavelength is tuned by applying strain to quantum-dot-containing nanomembranes via micro-structured piezoelectric actuators, and wavelength resonance is achieved between two different quantum dots in the device. Changes in the binding energy of different trion complexes are observed, as well as the reduction of the neutral exciton fine structure. We envisage that such implementations facilitate the heterogeneous integration of quantum photonic devices, integrating both solid-state quantum light sources and memories by adapting their characteristics.

The on-chip integration of single photon and entangled photon emitters such as epitaxially grown semiconductor quantum dots (QDs) into photonic frameworks is a rapidly evolving research field. GaAs QDs offer a high purity and high degree of entanglement due to in part exhibiting a very small fine structure splitting, along with short radiative lifetimes. Integrating strain-tunable QDs into nanostructures enhances the quantum optical fingerprint of these sources and allows for on-chip manipulation and routing of the generated quantum states of light. Efficient out-coupling of photons for off-chip processing and detection requires carefully engineered mesoscopic structures. Here, we present numerical studies of highly efficient grating couplers reaching up to over 90% transmission. A 2D Gaussian mode overlap of 83.39% for enhanced out-coupling of light from within strain-tunable photonic nanostructures for free-space transmission and single-mode fiber coupling is shown. The photon wavelength under consideration is 780 nm corresponding to the emission from GaAs QDs resembling the 87Rb D2 line. The presented numerical study helps to implement such sources for applications in complex quantum optical networks.

Efficient generation of entangled photon pairs at telecom wavelengths is a key ingredient for long-range quantum networks. While embedding semiconductor quantum dots into hybrid circular Bragg gratings has proven effective, it conflicts with p-i-n diode heterostructures which offer superior coherence. We propose and analyze hybrid circular photonic crystal gratings, incorporating air holes to facilitate charge carrier transport without compromising optical properties. Through numerical simulations, a broad cavity mode with a Purcell factor of 23 enhancing both exciton and biexciton transitions, and exceptional collection efficiency of 92.4% into an objective with numerical aperture of 0.7 are achieved. Furthermore, our design demonstrates direct coupling efficiency over 90.5% into a single-mode fiber over the entire telecom C-band. The hybrid circular photonic crystal grating thereby emerges as a promising solution for the efficient generation of highly coherent, polarization-entangled photon pairs.

Quantum key distribution (QKD) enables the transmission of information that is secure against general attacks by eavesdroppers. The use of on-demand quantum light sources in QKD protocols is expected to help improve security and maximum tolerable loss. Semiconductor quantum dots (QDs) are a promising building block for quantum communication applications because of the deterministic emission of single photons with high brightness and low multiphoton contribution. Here we report on the first intercity QKD experiment using a bright deterministic single photon source. A BB84 protocol based on polarisation encoding is realised using the high-rate single photons in the telecommunication C-band emitted from a semiconductor QD embedded in a circular Bragg grating structure. Utilising the 79 km long link with 25.49 dB loss (equivalent to 130 km for the direct-connected optical fibre) between the German cities of Hannover and Braunschweig, a record-high secret key bits per pulse of 4.8 × 10−5 with an average quantum bit error ratio of ~ 0.65% are demonstrated. An asymptotic maximum tolerable loss of 28.11 dB is found, corresponding to a length of 144 km of standard telecommunication fibre. Deterministic semiconductor sources therefore challenge state-of-the-art QKD protocols and have the potential to excel in measurement device independent protocols and quantum repeater applications.

Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The spectroscopic fingerprint and quantum optical properties of QDs are significantly influenced by their morphology. The effects of nanohole geometry and infilled material on the exciton binding energies and fine structure splitting are well-understood. However, a comprehensive understanding of GaAs/AlGaAs QD morphology remains elusive. To address this, we employ high-resolution scanning transmission electron microscopy (STEM) and reverse engineering through selective chemical etching and atomic force microscopy (AFM). Cross-sectional STEM of uncapped QDs reveals an inverted conical nanohole with Al-rich sidewalls and defect-free interfaces. Subsequent selective chemical etching and AFM measurements further reveal asymmetries in element distribution. This study enhances the understanding of DENI QD morphology and provides a fundamental three-dimensional structural model for simulating and optimizing their optoelectronic properties.

Colloidal semiconductor nanocrystals are promising materials for classical and quantum light sources due to their versatile chemistry and efficient photoluminescence (PL) properties. While visible emitters are well-established, the pursuit of excellent (near-)infrared sources continues. One notable candidate in this regard are photoluminescent two-dimensional (2D) PbS nanoplatelets (NPLs) exhibiting excitonic emission at 720 nm (1.7 eV) directly tying to the typical emission range limit of CdSe NPLs. Here, we present the first comprehensive analysis of low-temperature PL from this material class. Ultrathin 2D PbS NPLs exhibit high crystallinity confirmed by scanning transmission electron microscopy, and revealing Moire patterns in overlapping structures. At 4K, we observe unique PL features in single PbS NPLs, including narrow zero-phonon lines with line widths down to 0.6 meV and a linear degree of polarization up to 90 dominant emission source with a 2.3 ns decay time. Sub-meV spectral diffusion and no immanent blinking over minutes is observed, as well as discrete spectral jumps without memory effects. These findings advance the understanding and underpin the potential of colloidal PbS NPLs for optical and quantum technologies.

Colloidal semiconductor nanocrystals are promising materials for classical and quantum light sources due to their efficient photoluminescence (PL) and versatile chemistry. While visible emitters are well-established, excellent (near-infrared) sources are still being pursued. We present the first comprehensive analysis of low-temperature PL from two-dimensional (2D) PbS nanoplatelets (NPLs). Ultrathin 2D PbS NPLs exhibit high crystallinity confirmed by scanning transmission electron microscopy, revealing Moire patterns in overlapping NPLs. At 4 K, unique PL features are observed in single PbS NPLs, including narrow zero-phonon lines with line widths down to 0.6 meV and a linear degree of polarization up to 90%. Time-resolved measurements identify trions as the dominant emission source with a 2.3 ns decay time. Sub-meV spectral diffusion and no inherent blinking over minutes are observed, as well as discrete spectral jumps without memory effects. These findings advance the understanding and underscore the potential of colloidal PbS NPLs for optical and quantum technologies.

Received 28 February 2024DOI:https://doi.org/10.1103/PhysRevB.109.119903©2024 American Physical SocietyPhysics Subject Headings (PhySH)Research AreasBiexcitonsCoulomb blockadePhysical SystemsQuantum dotsTechniquesPhotoluminescenceQuantum Information, Science & TechnologyCondensed Matter, Materials & Applied Physics

Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices that incorporate the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by the droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 ± 1.7 nm) close to the zero-phonon line of silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 ± 0.09). High single photon purity is maintained from 4 K (g(2)(0) = 0.07 ± 0.02) up to 80 K (g(2)(0) = 0.11 ± 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.

The electron-hole exchange interaction is a fundamental mechanism that drives valley depolarization via intervalley exciton hopping in semiconductor multi-valley systems. Here, we report polarization-resolved photoluminescence spectroscopy of neutral excitons and negatively charged trions in monolayer MoSe$_2$ and WSe$_2$ under biaxial strain. We observe a marked enhancement(reduction) on the WSe$_2$ triplet trion valley polarization with compressive(tensile) strain while the trion in MoSe$_2$ is unaffected. The origin of this effect is shown to be a strain dependent tuning of the electron-hole exchange interaction. A combined analysis of the strain dependent polarization degree using ab initio calculations and rate equations shows that strain affects intervalley scattering beyond what is expected from strain dependent bandgap modulations. The results evidence how strain can be used to tune valley physics in energetically degenerate multi-valley systems.

GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied extensively in recent years. The LDE method allows for high crystallinity, as well as precise control of the density, morphology, and size of QDs. These properties make GaAs QDs an ideal candidate as single photon and entangled photon sources at short wavelengths (<800 nm). For technologically important telecom wavelengths, however, it is still unclear whether LDE grown QDs can be realized. Controlling the growth conditions does not enable shifting the wavelength of GaAs QDs to the telecom region. New recipes will have to be established. In this work, we study Indium–Aluminum (InAl) droplet etching on ultra-smooth In0.55Al0.45As surfaces on InP substrates, with a goal to lay the foundation for growing symmetrical and strain-free telecom QDs using the LDE method. We report that both droplets start to etch nanoholes at a substrate temperature above 415 °C, showing varying nanohole morphology and rapidly changing density (by more than one order of magnitude) at different temperatures. Al and In droplets are found to not intermix during etching, and instead etch nanoholes individually. The obtained nanoholes show a symmetric profile and very low densities, enabling infilling of lattice-matched InGaAs QDs on InxAl1−xAs/InP surfaces in further works.

Semiconductor quantum dots are promising building blocks for quantum communication applications. Although deterministic, efficient, and coherent emission of entangled photons has been realized, implementing a practical quantum repeater remains outstanding. Here we explore the statistical limits for entanglement swapping with sources of polarization-entangled photons from the commonly used biexciton-exciton cascade. We stress the necessity of tuning the exciton fine structure, and explain why the often observed time evolution of photonic entanglement in quantum dots is not applicable for large quantum networks. We identify the critical, statistically distributed device parameters for entanglement swapping based on two sources. A numerical model for benchmarking the consequences of device fabrication, dynamic tuning techniques, and statistical effects is developed, in order to bring the realization of semiconductor-based quantum networks one step closer to reality.

Semiconductor-based emitters of pairwise photonic entanglement are a promising constituent of photonic quantum technologies. They are known for the ability to generate discrete photonic states on-demand with low multiphoton emission, near-unity entanglement fidelity, and high single photon indistinguishability. However, quantum dots typically suffer from luminescence blinking, lowering the efficiency of the source and hampering their scalable application in quantum networks. In this paper, we investigate and adjust the intermittence of the neutral exciton emission in a GaAs/AlGaAs quantum dot under two-photon resonant excitation of the neutral biexciton. We investigate the spectral and quantum optical response of the quantum dot emission to an additional wavelength tunable gate laser, revealing blinking caused by the intrinsic Coulomb blockade due to charge capture processes. Our finding demonstrates that the emission quenching can be actively suppressed by controlling the balance of free electrons and holes in the vicinity of the quantum dot and thereby significantly increasing the quantum efficiency by $30%$.

The surface of semiconductor nanostructures has a major impact on their electronic and optical properties. Disorder and defects in the surface layer typically cause degradation of charge carrier transport and radiative recombination dynamics. However, surface vicinity is inevitable for many scalable nano-optical applications. Epitaxially grown quantum dots are the best candidate for high-performance single photon emission and show great potential for quantum technologies. Yet, these emitters only reveal their excellent properties if they are deeply embedded in a semiconductor host. Until today, quantum dots close to surfaces yield weak, broad, and unstable emissions. Here, we show the complete restoration of optical properties from quantum dots grown directly on a semiconductor surface. The vanishing luminescence from the as-grown sample turns into bright, ultra-stable, coherent and blinking-free single photon emission after sulphur passivation. Under quasi-resonant excitation, single photons are generated with 98.8% purity, 77% indistinguishability, linewidths down to 4 $\mu$eV and 99.69% persistency across 11 orders of magnitude in time. The emission is stable even after two years and when being subjected to nanomanufacturing processes. Some long-standing stumbling blocks for surface-dominated quantum dots are thereby removed, unveiling new possibilities for hybrid nano-devices and applications in quantum communication or sensing.