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个人简介
Tsutomu Tezuka received the B.S. and M.S. degrees in physics from Tohoku University, Sendai, Japan, in 1987 and 1989, respectively, and the Ph.D. degree in crystalline materials science from Nagoya University, Nagoya, Japan, in 2006.
He joined Toshiba Research and Development Center in 1989, where he was working on micro-cavity semiconductor lasers and strained-SiGe/Si field effect transistors. He also joined to two major national project of LSI devices and processes, the MIRAI Project and the FIRST Program from FY2001 to FY2013 as a member and a Group Leader. He and his group focused on research and development of strained-SOI, strained SiGe-OI-CMOS device, and Ge/III-V CMOS devices. He is currently with Toshiba Memory Corporation, where he is working on novel memory devices and processes.
Dr. Tezuka was a recipient of the Japan Society of Applied Physics (JSAP) Award for the Most Promising Young Scientist in 1994, the Takuo Sugano Award for Outstanding Far-East Paper (IEEE-ISSCC) in 2004, the 2003 Electron Devices Society George E. Smith Award (IEEE EDS) in 2004, and the JSAP Paper Award in 2016. He is a member of the Physical Society of Japan and the Japan Society of Applied Physics.
研究兴趣
论文共 129 篇作者统计合作学者相似作者
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期刊级别
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Japanese Journal of Applied Physicsno. SB (2019)
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials (2018)
IEEE Journal of the Electron Devices Society (2018): 500-505
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作者统计
#Papers: 138
#Citation: 3394
H-Index: 27
G-Index: 55
Sociability: 5
Diversity: 3
Activity: 0
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