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个人简介
Mikhail E. Gaevski received the M.S.S.E. degree from Leningrad State Technical University, Leningrad, Russia, in 1992, and the Ph.D. degree in solid-state physics from A. F. Ioffe Institute of Physics and Technology, St Petersburg, Russia, in 1995.
From 1995 to 2001, he was Junior Researcher and Researcher at the Characterization of Materials and Solid State Electronics Structures Laboratory, A. F. Ioffe Institute of Physics and Technology. From 2001 to 2007, he was a Postdoctoral Fellow, and later, a Research Professor at the Photonics and Microelectronics Laboratory, University of South Carolina, Columbia. He is currently with the Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, NJ, where he is engaged in developing low-cost high-throughput nanolithography for electronic and optoelectronic applications. His current research interests include fabrication and characterization of III-V optoelectronic devices, high-sensitivity high-temperature superconductors (HTSC) bolometers, antenna-type RF microbolometers, ZnO ceramics varistors, GaN-based high-frequency high-power devices, and deep UV emitters. His results have been published in more than 50 technical papers and in various refereed journals.
研究兴趣
论文共 117 篇作者统计合作学者相似作者
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ECS Meeting Abstractsno. 33 (2021): 1071-1071
MRS Advancesno. 17 (2021): 456-460
ECS Meeting Abstractspp.1071-1071, (2021)
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作者统计
#Papers: 120
#Citation: 3241
H-Index: 25
G-Index: 54
Sociability: 6
Diversity: 3
Activity: 18
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