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个人简介
Andries J. Scholten (F’19) received the M.Sc. degree in physics, with a focus on low-frequency noise in quantum point contacts, and the Ph.D. degree in physics, with a focus on phonon dynamics in amorphous silicon, from Utrecht University, Utrecht, The Netherlands, in 1991 and 1995, respectively.
He joined Philips Research Laboratories, Eindhoven, The Netherlands, in 1996. In 2005, he was promoted to Senior Principal Scientist. In 2006, he joined NXP Semiconductors, Beijing, China, which was, at that time, spun off from Philips, where he has co-developed and industrialized the well-known compact models MOS Model 9, MOS Model 11, and PSP, the latter of which was elected as the CMC standard MOSFET model in 2005. He is the Principal Developer of JUNCAP2, a comprehensive model for MOSFET junctions. He is currently involved in the measurement, understanding, and modeling of the HBT safe operating area. He has published more than 100 journal papers, conference contributions, and book chapters.
Dr. Scholten served as the IEDM Committee Member twice from 2000 to 2001 and from 2013 to 2014. He has been an Editor of the IEEE Transactions on Electron Devices since 2015.
研究兴趣
论文共 109 篇作者统计合作学者相似作者
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ECS Transactionsno. 4 (2022): 171-178
ECS Transactionsno. 32 (2022): 1202-1202
ECS Meeting Abstractsno. 32 (2022): 1201-1201
Guofu Niu,Yiao Li,Xuewei Ding,Anni Zhang,Huaiyuan Zhang,Andries Scholten,Marnix Willemsen,Ralf Pijper, Luuk F. Tiemeijer
Noise in Nanoscale Semiconductor Devicespp.495-516, (2020)
Guofu Niu,Anni Zhang,Yiao Li,Huaiyuan Zhang,Andries Scholten,Marnix Willemsen,Ralf Pijper, L.F. Tiemeijer
ECS transactionsno. 5 (2020): 119-125
Noise in Nanoscale Semiconductor Devicespp.687-710, (2020)
2020 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS) (2020)
ECS Meeting Abstractsno. 24 (2020): 1700-1700
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作者统计
#Papers: 107
#Citation: 3165
H-Index: 27
G-Index: 54
Sociability: 6
Diversity: 2
Activity: 2
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