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Antonio J. García-Loureiro received the M.Sc. degree in electronic physics and the Ph.D. degree in electronics and computer science from the University of Santiago de Compostela, Santiago de Compostela, Spain, in 1994 and 1999, respectively. His M.Sc. thesis resolves the parallelization using dynamic balance of load for scientific programs, and his Ph.D. thesis deals with the modeling and simulation of InP- and GaAs-based heterojunction bipolar transistors, after he has developed a 3-D parallel numerical simulator for graded and abrupt HBTs.
He was a Visiting Postgraduate Student at the Edinburgh Parallel Computing Centre, Edinburgh, U.K., in 1996. He is a Member of Computer Architecture Group, Department of Electronics and Computer Science, University of Santiago de Compostela. He was a Visiting Postdoctoral Researcher at the Department of Electrical Engineering, University Politecnica de Cataluña, Spain, in 2001, and worked on analytical models for double abrupt heterojunction bipolar transistors. In 2002 and 2006, he was a Visiting Postdoctoral Researcher at the Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, U.K., and worked on modeling and simulation of high-electron mobility transistors (HEMTs) and MOSFETs. From 2001 to 2004, he was an Assistance Professor, and since 2005, he has been an Associate Professor with the Department of Electronics and Computer Science, University of Santiago de Compostela. His current research interests include modeling of bipolar, HEMTs, and MOSFETs using 3-D parallel drift–diffusion and Monte Carlo device simulations.
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Results in Engineering (2024): 101987
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2024): 112662
PloS oneno. 7 (2023): e0288964-e0288964
IEEE Access (2023): 84371-84378
2023 IEEE LATIN AMERICAN ELECTRON DEVICES CONFERENCE, LAEDCpp.1-4, (2023)
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2023 IEEE LATIN AMERICAN ELECTRON DEVICES CONFERENCE, LAEDCno. 99 (2023): 1-1
2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPADpp.281-284, (2023)
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