Bruno Daudin

Département de la Recherche Fondamentale sur la Matière Condensée, CEA/Grenoble, SPMM, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

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Papers272 papers

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Resonant Raman scattering of core-shell GaN/AlN nanowires

Ana Cros, Alberto Garcia-Cristobal,Karine Hestroffer,J Wang, Francois Demangeot, Renaud Pechou,Bruno Daudin

Nanotechnology, (2020)

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Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy

Bruno Daudin,Fabrice Donatini,Catherine Bougerol,Bruno Gayral,Edith Bellet-Amalric, Rémy Vermeersch, Nathaniel Feldberg,Jean-Luc Rouvière, Maria Jose Recio Carretero,Nuria Garro, Saul Garcia-Orrit,Ana Cros

Nanotechnology, no. 2 (2020): 025601

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Nanoscale x-ray investigation of composition fluctuations in AlGaN nanowires

Matthias Belloeil,Maria Grazia Proietti, Hubert Renevier,Bruno Daudin

Nanotechnology, no. 37 (2020): 375709

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The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

Bruno Daudin, Alexandra Madalina Siladie, Marion Gruart,Martien den Hertog,Catherine Bougerol,Benedikt Haas,Jean-Luc Rouvière,Eric Robin, Maria Jose Recio Carretero,Nuria Garro,Ana Cros

Nanotechnology, no. 8 (2020): 085606

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Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam

Akira Uedono, Alexandra-Madalina Siladie,Julien Pernot,Bruno Daudin,Shoji Ishibashi

Journal of Applied Physics, no. 17 (2019): 175705

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Role of Ga Surface Diffusion in the Elongation Mechanism and Optical Properties of Catalyst-Free GaN Nanowires Grown by Molecular Beam Epitaxy

Marion Gruart,Gwénolé Jacopin,Bruno Daudin

Nano letters, no. 7 (2019): 4250-4256

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Incorporation of Europium into GaN Nanowires by Ion Implantation

Djibril Nd Faye,Xavier Biquard, Emilio Nogales, Miguel Felizardo,Marco Peres,Andrés Redondo-Cubero, Thomas Auzelle,Bruno Daudin,Luiz H.G. Tizei,Mathieu Kociak,Pierre Ruterana,Wolfhard Moeller

Journal of Physical Chemistry C, (2019)

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Spontaneous intercalation of Ga and In bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC

Nathaniel Feldberg, Oleksii Klymov,Núria Garro,Ana Cros, Nicolas Mollard,Hanako Okuno, Marion Gruart,Bruno Daudin

Nanotechnology, (2019)

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Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

Alexandre Concordel,Gwénolé Jacopin,Bruno Gayral,Núria Garro,Ana Cros,Jean-Luc Rouvière,Bruno Daudin

Applied Physics Letters, no. 17 (2019): 172101

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Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications

J. Cardoso,N. Ben Sedrine,A. Alves,M. A. Martins, M. Belloeil,B. Daudin, D. Nd. Faye,E. Alves,K. Lorenz,A. J. Neves,M. R. Correia,T. Monteiro

Applied Physics Letters, no. 20 (2018): 201905

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Chapter Six - Growth and Structural Characterization of Self-Nucleated III-Nitride Nanowires

T. Auzelle,B. Daudin

Semiconductors and Semimetals, (2017): 203-229

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Doping β-Ga2O3 with europium: influence of the implantation and annealing temperature

M Peres,K Lorenz, E Alves,E Nogales,B Méndez,X Biquard,B Daudin,E G Víllora,K Shimamura

Journal of Physics D, no. 32 (2017): 325101

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Quantum-dot like localization in AlGaN nanowires (Conference Presentation)

Jen-Inn Chyi, Hiroshi Fujioka, Hadis Morkoç, Yasushi Nanishi, Ulrich T. Schwarz, Jong-In Shim, Matthias Belloeil,B. Daudin, Bruno Gayral

Proceedings of SPIE, (2017)

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Optical Spectroscopy at High Spatial Resolution with Fast Electrons

Luiz H. G. Tizei,Sophie Meuret, Noemie Bonnet,François Treussart,B. Daudin,B. Gayral, Romain Brourellier, Anna Tararan,Alberto Zobelli,Yung-Chang Lin,Kazu Suenaga,Luiz Fernando Zagonel

Microscopy and Microanalysis, (2017): 1528-1529

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Axial p-n junction and space charge limited current in single GaN nanowire

Zhihua Fang,Fabrice Donatini,Bruno Daudin,Julien Pernot

Nanotechnology, (2017)

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Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

J. A. Budagosky,N. Garro,A. Cros,A. García-Cristóbal,S. Founta,B. Daudin

Materials Science in Semiconductor Processing, (2016): 76-80

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Chemical composition fluctuations and strain relaxation in InGaN nanowires: The role of the metal/nitrogen flux ratio

Xin Zhang, Matthias Belloeil, Pierre-Henri Jouneau,Catherine Bougerol,B. Gayral,B. Daudin

Materials Science in Semiconductor Processing, (2016): 79-84

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Unraveling the strain state of GaN down to single nanowires

Thomas Auzelle,X. Biquard,E. Bellet-Amalric, Zhihua Fang,H. Roussel,A. Cros,B. Daudin

Journal of Applied Physics, no. 22 (2016): 225701

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Growth mechanism of InGaN nano-umbrellas

Xin Zhang,Benedikt Haas,Jean-Luc Rouvière,Eric Robin,Bruno Daudin

Nanotechnology, no. 45 (2016): 455603-455603

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Quantum dot-like behavior of compositional fluctuations in AlGaN nanowires

M Belloeil,B Gayral,B Daudin

Nano letters, (2016)

Cited by21WOSBibtex

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Papers272 papers

Bruno Daudin