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个人简介
David Sheridan (SM’17) received the B.S., M.S., and Ph.D. degrees in electrical engineering from Auburn University, Auburn, AL, USA, in 1995, 1997, and 2001, respectively.
His research in WBG devices started in 1995 with the development of high-temperature SiC devices and packaging and extending to the optimization of the process, design, and edge termination techniques for early multi-kV SiC JBS diodes. Since 2015, he has been with Alpha and Omega Semiconductor, Sunnyvale, CA, USA, leading the GaN and SiC power device technology development and products. He has authored or coauthored over 80 technical publications.
Dr. Sheridan has served as an Editor for the IEEE Transactions on Electron Devices and participated in several IEEE conferences, including IEDM, BCTM, ISPSD, the IEEE International Reliability Physics Symposium (IEEE IRPS), ESREF, and the EDS Power Devices and ICs.
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论文共 18 篇作者统计合作学者相似作者
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Solid state electronics letters (2021): 53-58
Additional conferences (Device packaging, HiTEC, HiTEN, & CICMT)no. HITEN (2011): 000098-000103
openalex(2006)
AIP Conference Proceedings (2005): 247-252
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作者统计
#Papers: 18
#Citation: 179
H-Index: 6
G-Index: 9
Sociability: 4
Diversity: 2
Activity: 0
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