基本信息
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职业迁徙
个人简介
Daniel Habersat received the B.S. degree in physics from the University of Maryland, College Park, in 2001, and the M.S. degree in applied physics from Johns Hopkins University, Baltimore, MD, in 2007.
Since 2002, he has been working for the Sensors and Electron Devices Directorate with the U.S. Army Research Laboratory, Adelphi, MD. He is currently the Lead Technical Engineer for the MOS Evaluation Team of the Power Components Branch. His research interests are focused on the evaluation of MOS interface defects and their influences on device performance and reliability.
研究兴趣
论文共 78 篇作者统计合作学者相似作者
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Materials Science Forum (2023): 151-155
IRPSpp.1-2, (2023)
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXXI (2023)
ECS Meeting Abstractsno. 31 (2022): 1315-1315
ECS Meeting Abstractsno. 34 (2021): 991-991
Justin Lynch,Nick Yun,Adam J. Morgan,Woongje Sung, Igal Deckman, Dennis Rossman, Sung Kim, Duy-Son Nguyen, Jin-Ho Seo,Daniel Habersat,Miguel Hinojosa,Ronald Green,Aivars Lelis
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)pp.95-100, (2021)
ECS Meeting Abstractspp.1838-1838, (2020)
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作者统计
#Papers: 77
#Citation: 1967
H-Index: 19
G-Index: 44
Sociability: 5
Diversity: 2
Activity: 3
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