基本信息
浏览量:0
职业迁徙
个人简介
David Greenberg (Member, IEEE) received the B.S. degree in electrical engineering at Columbia University, New York, under a Pulitzer scholarship in 1988 and the M.S. and Ph.D. degrees at the Massachusetts Institute of Technology, Cambridge, under Hertz and Intel Foundation fellowships in 1990 and 1994, respectively.
He is a semiconductor device researcher working in advanced RF technology development and assessment. During his graduate school tenure, he explored the use of GaAs and InP-based FETs for power and laser driver applications and completed two summer internships at AT&T Bell Labs performing software and board design for ISDN and DSP chipsets. He joined the IBM T. J. Watson Research Center, Yorktown Heights, NY, as a Research Staff Member in 1995, where he has played key roles in the development of several generations of SiGe BiCMOS and RF CMOS technologies, including device design and evaluation, power transistor development, noise measurement and modeling, technology versus application assessment, and interfacing with customer circuit design groups. He is an author or coauthor of seven issued patents and over 35 technical papers.
Dr. Greenberg is a Member of Tau Beta Pi.
研究兴趣
论文共 24 篇作者统计合作学者相似作者
按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
GAAS 2005: 13TH EUROPEAN GALLIUM ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS APPLICATION SYMPOSIUM, CONFERENCE PROCEEDINGSpp.29-35, (2005)
引用23浏览0EIWOS引用
23
0
David L Harame,X Wang,Basanth Jagannathan, J Perkarik,Josef Watts,David C Sheridan,P E Cottrell,David R Greenberg,G Freeman,K M Newton, Marcel Graf,Essam Mina,
引用24浏览0EIWOS引用
24
0
Silicon Heterostructure Devicespp.4.14-571, (2005)
David L Harame,Steven J Koester,G Freeman, P Cottrel,K Rim, G Dehlinger,David C Ahlgren,James S Dunn,David R Greenberg,Alvin J Joseph, Frederick A Anderson,J S Rieh,
加载更多
作者统计
合作学者
合作机构
D-Core
- 合作者
- 学生
- 导师
数据免责声明
页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn