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个人简介
Fabrice Caignet received the M.S. degree in electrical engineering from the University of Toulouse, Toulouse, France, in 1995, and the Ph.D. degree in electronic design from the French National Institute of Applied Sciences (INSA), Toulouse, France, in 1999.
From 1995 to 2000, he worked on signal integrity and EMC at the chip level at INSA. In 2001, he joined the Laboratory of Analysis and Architecture of Systems (LAAS), Toulouse, France, to work on the integration of optical links and devices into silicon chips, tackling challenges like propagation time on high complex architectures, EMC aspects, and cost. In 2006, he joined the electrostatic discharge team of LAAS to work on ESD at a system level. His current research interests include developing measurement and simulation methodology to predict ESD impact at the IC level.
研究兴趣
论文共 68 篇作者统计合作学者相似作者
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IEEE Letters on Electromagnetic Compatibility Practice and Applicationspp.1-1, (2024)
IEEE Transactions on Electromagnetic Compatibilityno. 99 (2024): 1-11
HAL (Le Centre pour la Communication Scientifique Directe) (2023)
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HAL (Le Centre pour la Communication Scientifique Directe) (2023)
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2022 INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY (EMC EUROPE 2022)pp.120-125, (2022)
IEEE transactions on electromagnetic compatibilityno. 6 (2022): 1890-1898
Microelectronics reliability/Microelectronics and reliability (2022): 114661-114661
2022 International Symposium on Electromagnetic Compatibility – EMC Europe (2022)
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作者统计
#Papers: 68
#Citation: 795
H-Index: 16
G-Index: 27
Sociability: 5
Diversity: 1
Activity: 3
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