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He worked on amorphous semiconductors including chalcogenides and hydrogenated amorphous Si, as well as non-crystalline oxides. He joined the Faculty of NC State University in 1980, and has been there since that time.
Professor Gerald Lucovsky has worked on thin film gate dielectrics and surface passivation for Si and compound semiconductors by remote plasma processing for more than 25 ars, with state of the art results for ultra-thin Si oxyitride devices. This approach has been applied to the passivation of GaN surfaces with excellent results, and is being extended to ternary III-V's as well.
Professor Gerald Lucovsky has worked on thin film gate dielectrics and surface passivation for Si and compound semiconductors by remote plasma processing for more than 25 ars, with state of the art results for ultra-thin Si oxyitride devices. This approach has been applied to the passivation of GaN surfaces with excellent results, and is being extended to ternary III-V's as well.
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Microelectronic Engineeringno. C (2013): 370-373
XXIST INTERNATIONAL SYMPOSIUM ON THE JAHN-TELLER EFFECT 2012 (2013)
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