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个人简介
John Golz received the B.A. degree in physics from the University of California at Berkeley, Berkeley, CA, USA, in 1989, and the M.S. degree in electrical engineering from Yale University, New Haven, CT, USA, in 1992.
He joined IBM Microelectronics, East Fishkill, NY, USA, in 1996, where he was involved in the development of standalone, embedded, and 3-D stacked DRAM memories. He has been with GLOBALFOUNDRIES, East Fishkill, NY, USA, developing solutions including 2.5-D interposer and 3-D chip stacking for high-bandwidth memory and low-voltage embedded non-volatile memories for high-performance logic.
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