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John Willms received the M.Sc. degree in electrical engineering from Delft University of Technology, Delft, The Netherlands, in 1994.
In 1995 he joined NXP Semiconductors, Nijmegen, The Netherlands, where he worked on modeling of RF power transistors and on the modeling of RF devices created in advanced RF processes. He joined the TNO Physics and Electronics Laboratories in The Hague in 1998 were he worked on the design of MMICs and power amplifiers in GaAs for radar applications. In 2001, he joined Dialog Semiconductor, were he has been working on the design of DECT and Bluetooth transceivers in CMOS. He is currently Member of Technical Staff, and his current research interests are in the design of Power Amplifiers and (adaptive) impedance matching of integrated RF circuits to external antennae.
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2015 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC) (2015): 238-U333
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