基本信息
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个人简介
Jun-Ichi Matsunaga was born in Oita Prefecture, Japan, on May 11, 1948. He received the B.S. degree from Kyoto University, Kyoto, Japan, in 1972, and the M.S. degree from the University of Tokyo, Tokyo, Japan, in 1974.
In 1974, he joined the Toshiba Research and Development Center, Toshiba Corporation, Kawasaki, Japan. In 1979, he moved to the Semiconductor Device Engineering Laboratory, and in 1989, he returned to the ULSI Research Center, Research and Development Center. After that, he moved again to the ULSI Device Engineering Laboratory, Microelectronics Engineering Laboratories, in which he was responsible for the development of high-end RISC processors, advanced nonvolatile memories, and advanced analog BiCMOS/CMOS devices. He had been engaged in CMOS process integration for static memories, nonvolatile memories, and microprocessors. Above all, he developed 64Mbit SRAM, 256Mbit SRAM, and 1Mbit SRAM. In addition to these device developments, he has investigated device physics and reliability problems especially such as hot-carrier injection phenomenon in MOS devices. Currently, he is with the Memory LSI Research and Development Center, Memory Division, Semiconductor Company, Toshiba Corporation.
Mr. Matsunaga is a member of the Japan Society of Applied Physics.
研究兴趣
论文共 22 篇作者统计合作学者相似作者
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Shigeru Kambayashi,Ichiro Mizushima, Masato Kemmochi,Hiroshi Kawaguchi, Shohei Shima, Hiroki Kuwano,S Onga,Junichi Matsunaga
Honolulu, Hawaii, USApp.109-110, (1990)
Minami Matsui,H S Momose,Yukihiro Urakawa,Tetsuo Maeda, Aiko Suzuki,N Urakawa,Kensuke Sato, Kohji Makita,Junichi Matsunaga,Kiyofumi Ochii
Tetsuya Iizuka,Takayasu Sakurai,Junichi Matsunaga,K Maeguchi, Kenji Kawagai,Tetsunori Kobayashi, Yoshihisa Shiotari,Kiyoshi Kobayashi, T Miyoshi
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作者统计
#Papers: 24
#Citation: 542
H-Index: 16
G-Index: 23
Sociability: 4
Diversity: 2
Activity: 0
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