M-J Kao - Electronics and Optoelectronics Research Labs, Industrial Technology ResearchInstitute (ITRI),

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Assembly process and reliability assessment of TSV/RDL/IPD interposer with multi-chip-stacking for 3D IC integration SiP

Chaujie Zhan,Peijer Tzeng,John H Lau,Mingji Dai,Hengchieh Chien,Chingkuan Lee,Shangtsai Wu,Kuoshu Kao,Shinyi Huang,Chiawen Fan,Suching Chung,Yuwei Huang,

Electronic Components and Technology Conference（2012）

引用23浏览0EIWOS引用

Impact of High-κ TaOx Thickness on the Resistive Memory Properties in IrOx/TaOx/WOx/W Structure

Amit Prakash,S Maikap,W S Chen,Heng Yuan Lee,Frederick T Chen,M J Kao,M J Tsai

mag（2012）

引用23浏览0引用

Development of fluxless chip-on-wafer bonding process for 3DIC chip stacking with 30μm pitch lead-free solder micro bumps and reliability characterization

Chau-Jie Zhan,Jing-Ye Juang,Yu-Min Lin,Yu-Wei Huang,Kuo-Shu Kao,Tsung-Fu Yang,Su-Tsai Lu,John H. Lau,Tai-Hong Chen,Robert Lo,M. J. Kao

2011 IEEE 61st Electronic Components and Technology Conference (ECTC) (2011)

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Impact of slurry in Cu CMP (chemical mechanical polishing) on Cu topography of Through Silicon Vias (TSVs), re-distribution layers, and Cu exposure

J C Chen,P J Tzeng,Shi Chao Chen,C Y Wu,C C Chen,Y C Hsin,John H Lau, Y F Hsu,S H Shen,S C Liao,C H Ho,C H Lin,

Electronic Components and Technology Conference（2011）

引用23浏览0EIWOS引用

Wafer Bumping and Characterizations of Fine-Pitch Lead-Free Solder Microbumps on 12” (300mm) wafer for 3D IC Integration

J. H. Lau,P-J Tzeng, C-K Lee,C-J Zhan,M-J Dai,Li Li, C-T Ko,S-W Chen, H. Fu, Y. Lee, Z. Hsiao,J. Huang,

International Symposium on Microelectronicsno. 1 (2011): 000650-000656

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Characterization and reliability assessment of solder microbumps and assembly for 3D IC integration

Chingkuan Lee,Taochih Chang,Yujiau Huang,Huanchun Fu,Juihsiung Huang,Zhicheng Hsiao,John H Lau,Chengta Ko,Renshin Cheng,Peichen Chang,Kuoshu Kao,Yulan Lu,

Electronic Components and Technology Conference（2011）

引用48浏览0EIWOS引用

Bipolar Resistive Switching Memory Using Cu Metallic Filament In Ge0.4se0.6 Solid Electrolyte

S. Z. Rahaman,S. Maikap,H. -C. Chiu,C. -H. Lin,T. -Y. Wu,Y. -S. Chen, P. -J. Tzeng,F. Chen,M. -J. Kao,M. -J. Tsai

ELECTROCHEMICAL AND SOLID STATE LETTERSno. 5 (2010)

引用57浏览0引用

Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

S. Z. Rahaman,S. Maikap,H.-C. Chiu,C.-H. Lin,T.-Y. Wu,Y.-S. Chen,P.-J. Tzeng,F. Chen,M.-J. Kao,M.-J. Tsai

ELECTROCHEMICAL AND SOLID STATE LETTERS（2010）

引用58浏览0引用

Low Power Operation of Resistive Switching Memory Device Using Novel W/Ge0.4Se0.6/Cu/Al Structure

S Z Rahaman,S Maikap,H C Chiu,C H Lin,T Y Wu,Y S Chen, P J Tzeng, F Chen,M J Kao,M J Tsai

Monterey, CA（2009）

引用6浏览0EIWOS引用

Resistive Switching Memory using High-κ Ta₂O₅ Films

Y. R. Tsai, S. Maikap, D. Panda, S. Z. Rahaman, C. S. Lai, P. J. Tzeng,C. H. Lin, T. C. Tien,T. Y. Wu,C. C. Wang,M. J. Kao,M. J. Tsai

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials (2008)

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