基本信息
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职业迁徙
个人简介
Mike Kunze received the Diploma degree in physics and Ph.D. degree from the University of Ulm, Ulm, Germany, in 1997 and 2001, respectively. His diploma thesis concerned the growth (PECVD) and characterization of diamond-based FETs. His doctoral dissertation concerned the growth (MBE) and materials analysis of low-temperature-grown InP heterostructures on foreign substrates.
He has authored or coauthored approximately 25 publications since 1997. Since January 2001, he has been involved with GaN-based HFETs. He has also investigated the application of GaN-based HFETs. He has also dealt with epitaxy for InP-based HEMT devices and resonant tunneling diode (RTD) structures. He holds one patent.
研究兴趣
论文共 43 篇作者统计合作学者相似作者
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mag(2012)
引用24浏览0引用
24
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mag(2008)
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21
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mag(2008)
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23
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作者统计
#Papers: 43
#Citation: 1541
H-Index: 23
G-Index: 39
Sociability: 5
Diversity: 2
Activity: 0
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