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个人简介
Paweł Kamiński received the M.Sc. degree in electronics from Warsaw Technical University, Warsaw, Poland, in 1970, the Ph.D. degree in physics from Odessa State University, Odessa, Ukraine, in 1981, and the D.Sc. degree in semiconductor electronics from the Institute of Electron Technology, Warsaw, in 1993.
At the beginning of his career, he was involved in obtaining high-quality single crystals of III–V compounds. He joined the Scientific-Production Center for Semiconductor Materials, Warsaw, in 1971, where he began his research activity. In 1978, he was with the Institute of Electronic Materials Technology (ITME). He returned to ITME in 1987, and started developing the digital version of the photoinduced transient spectroscopy, allowing for a higher resolution in determining the energy levels in semi-insulating (SI) materials. From 1989 to 2013, he was responsible for the project aimed at determining the properties and concentrations of defect centers related to metallic impurities in silicon epitaxial layers and compensating for defect centers in SI SiC and SI GaP. Since 2000, he has been involved in studies of radiation defects in silicon in terms of improving the radiation hardness of high-energy particle detectors. He is currently an Associate Professor with ITME. He has authored or co-authored over 150 papers in the areas of semiconductor technology, defects properties, and material properties tailoring. He has given many lectures at scientific conferences. Since 1975, his research interests have been related to the characterization of energy levels of lattice defects in both low-resistivity semiconductors and SI materials.
Dr. Kamiński is a member of the Materials Research Society. In 1986, he was a recipient of the British Council Fellowship for studying deep levels in SI GaAs and SI InP at the University of Wales Institute of Science and Technology.
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