Ahn J H

Jonghyun Ahn received the B.S. degree in electrical and electronics engineering from Chungnam National University, Daejeon, South Korea, in 2009. In 2009, he joined the Memory Division, Samsung Electronics, Hwaseong, South Korea, where he has been involved in server DRAM, and now engaged in the design of high-bandwidth memory-2 (HBM2), HBM2E, and HBM3. His research interests include low-power DRAM and circuit verification.