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个人简介
Sameh Khalil received the Ph.D. degree from the University of Toronto, Toronto, ON, Canada, in 2004, for his research work on lateral super junction Lateral Double-diffused Metal Oxide Semiconductor Field-effect Transistor (LDMOSTs) where he pioneered how to terminate the super junction pillars in such 3-D structures and implemented the first experimental lateral super junction devices.
He was with imec, Leuven, Belgium, International Rectifier (now Infineon Technologies), El Segundo, CA, USA, and HRL Laboratories, Malibu, CA, USA. He has been with Infineon Technologies since 2015. He is currently a Senior Principal Engineer with Infineon Technologies Americas Corporation. He heads a global gallium nitride (GaN) design-for-reliability team. He gave many presentations, participated in invited talks and panels, and moderated workshops at international conferences.
Dr. Khalil has served on the Technical Program Committee at International Reliability Physics Symposium (IRPS), International Symposium on Power Semiconductor Devices (ISPSD), and Workshop on Wide Bandgap Power Devices and Applications (WiPAD). He was the General Chair of WiPDA 2021. He is also the Co-Chair of the JC701.1 Sub-Committee of the JEDEC’s Task Group concerned with Standards of GaN Power Conversion Semiconductor Reliability and Qualification Procedures.
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论文共 19 篇作者统计合作学者相似作者
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#Papers: 19
#Citation: 325
H-Index: 11
G-Index: 18
Sociability: 4
Diversity: 2
Activity: 3
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