Tatsuya Fujishima

Department of Photonics, School of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan

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Papers15 papers

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Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates

Tsutomu Araki, Satoru Uchimura,Junichi Sakaguchi,Yasushi Nanishi,Tatsuya Fujishima,Allen Hsu,Ki Kang Kim,Tomas Palacios,A Pesquera,Alba Centeno,A Zurutuza

Applied Physics Express, (2014)

Cited by27Bibtex

GaN-on-Si Vertical Schottky and p-n Diodes

Yuhao Zhang,Min Sun,Daniel Piedra,Mohamed Azize,Xu Zhang,Tatsuya Fujishima,Tomas Palacios

IEEE Electron Device Letters, no. 6 (2014): 618-620

Cited by59EIWOSBibtex

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

Yuhao Zhang,Min Sun,Sameer Joglekar,Tatsuya Fujishima,Tomas Palacios

Applied Physics Letters, (2013)

Cited by59Bibtex

Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Junichi Sakaguchi,Tsutomu Araki,Tatsuya Fujishima,Elison Matioli,Tomas Palacios,Yasushi Nanishi

Japanese Journal of Applied Physics, (2013)

Cited by7Bibtex

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

Yuhao Zhang,Min Sun,Zhihong Liu,Daniel Piedra,Hyungseok Lee,Feng Gao,Tatsuya Fujishima,Tomas Palacios

IEEE Transactions on Electron Devices, no. 7 (2013): 2224-2230

Cited by42EIWOSBibtex

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

Tatsuya Fujishima,Sameer Joglekar,Daniel Piedra,Hyungseok Lee,Yuhao Zhang,Akira Uedono,Tomas Palacios

Applied Physics Letters, (2013)

Cited by28Bibtex

Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)

Junichi Sakaguchi,Tsutomu Araki,Tatsuya Fujishima

Japanese journal of applied physics : JJAP, no. 8 (2013)

Bibtex

The low leakage current in floating body GaN metal oxide semiconductor field effect transistors

Tatsuya Fujishima,Hirotaka Otake,Yasushi Nanishi,Hiroaki Ohta

Solid State Electronics, no. 12 (2010): 1561-1565

EIBibtex

Study of the flat band voltage shift of metal/insulator/n-GaN capacitors by annealing

Junjiroh Kikawa,Masamitsu Kaneko,Hirotaka Otake,Tatsuya Fujishima,Kentaro Chikamatsu,Atsushi Yamaguchi,Yasushi Nanishi

Physica Status Solidi B-basic Solid State Physics, no. 7 (2010): 1649-1652

Bibtex

Direct observation of crosssectional potential distribution in GaN-based MIS structures by Kelvin-probe force microscopy

Masamitsu Kaneko,Tatsuya Fujishima,Kentaro Chikamatsu,Atsushi Yamaguchi,Junjiroh Kikawa,Hirotaka Otake,Yasushi Nanishi

Physica Status Solidi (c), no. S2 (2009): 968-971

Bibtex

Detailed Investigation of GaN Metal-Insulator-Semiconductor Structures by Capacitance-voltage and Deep Level Transient Spectroscopy Methods

Junjiroh Kikawa, Yuki Horiuchi,Eiji Shibata,Masamitsu Kaneko,Hirotaka Otake,Tatsuya Fujishima,Kentaro Chikamatsu,Atsushi Yamaguchi,Yasushi Nanishi

(2008)

Bibtex

Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

Hirotaka Otake,Kentaro Chikamatsu,Atsushi Yamaguchi,Tatsuya Fujishima,Hiroaki Ohta

Applied Physics Express, no. 1 (2008)

Cited by60Bibtex

Reduction in threshold voltages in GaN-based metal oxide semiconductor field effect transistors

Tatsuya Fujishima,Hirotaka Otake,Hiroaki Ohta

Applied Physics Letters, (2008)

Cited by3Bibtex

Thermal analysis of AlGaN/GaN HFETs using electro-thermal simulation and micro-Raman spectroscopy

Tatsuya Fujishima,Kaoru Inoue,Kenichi Kosaka,Akihiro Hinoki,Tomoyuki Yamada,Tadayoshi Tsuchiya,Junjiroh Kikawa,Shinichi Kamiya,Akira Suzuki,Tsutomu Araki,Yasushi Nanishi

(2007)

Cited by2Bibtex

Temperature distribution analysis of AlGaN/GaN HFETs operated around breakdown voltage using micro-Raman spectroscopy and device simulation

Kenichi Kosaka,Tatsuya Fujishima,Kaoru Inoue,Akihiro Hinoki,Tomoaki Yamada,Tadayoshi Tsuchiya,Junjiroh Kikawa,Shinichi Kamiya,Akira Suzuki,Tsutomu Araki,Yasushi Nanishi

Physica Status Solidi (c), no. 7 (2007): 2744-2747

Cited by5Bibtex

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