V.F. Mitin - Department of Electrical Engineering, University at Buffalo

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Temperature Dependence of Hot-Electron Graphene Fet Bolometric Detectors Response to Modulated Terahertz Radiation

Maxim Ryzhii,Victor Ryzhii,Chao Tang,Taiichi Otsuji,Vladimir Mitin,Michael S. Shur

International Journal of High Speed Electronics and Systems（2024）

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Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii,V. Mitin,M. S. Shur

Journal of Applied Physicsno. 19 (2024)

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Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As _x P _1-x gate layer

V. Ryzhii,C. Tang,T. Otsuji,M. Ryzhii,V. Mitin,M. S. Shur

Scientific Reports（2023）

引用1浏览0WOSNATURE引用

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

V. Ryzhii,M. S. Shur, M. Ryzhii,V. Mitin, C. Tang,T. Otsuji

International Journal of High Speed Electronics and Systems (2023)

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Terahertz bolometric detectors based on graphene field-effect transistors with the composite h-BN/black-P/h-BN gate layers using plasmonic resonances

M. Ryzhii,V. Ryzhii,M. S. Shur,V. Mitin,C. Tang,T. Otsuji

JOURNAL OF APPLIED PHYSICSno. 8 (2023)

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Resonant plasmonic terahertz detection in gated graphene p-i-n field-effect structures enabled by the Zener-Klein tunneling nonlinearity

V. Ryzhii, T. Otsuji, M. Ryzhii,V. Mitin,M. S. Shur

arxiv（2022）

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Nanocrystalline Sic Film Thermistors For Cryogenic Applications

V F Mitin, V V Kholevchuk,A V Semenov, A A Kozlovskii,N S Boltovets, V A Krivutsa, A S Slepova, S V Novitskii

REVIEW OF SCIENTIFIC INSTRUMENTS（2018）

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Micro-and Nanotechnology Sensors, Systems, and Applications III sponsors: The Society of Photo-Optical Instrumentation Engineers (SPIE).-Том. 8031. Micro-and Nanotechnology …

MG Lagally, AM Kiefer, DM Paskiewicz, F Cavallo,SA Scott, ZQ Ma, DE Savage, SJ Papadakis, JA Hoffmann, AH Monica, D Deglau, R Osiander,

user-5f8cfb504c775ec6fa691ca9（2011）

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Tailoring The Electrical Properties Of Ge/Gaas By Film Deposition Rate And Preparation Of Fully Compensated Ge Films

V F Mitin,V K Lazarov,P M Lytvyn,Philip J Hasnip,V V Kholevchuk,L A Matveeva,E Yu Kolyadina, I E Kotenko,E F Venger

PHYSICAL REVIEW B（2011）

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Graphene-Based Terahertz Devices: Concepts and Characteristics

V. Ryzhii, M. Ryzhii, A. Satou, N. Ryabova, T. Otsuji,V. Mitin, F. T. Vasko, A. A. Dubinov, V. Y. Aleshkin, M. S. Shur

Future Trends in Microelectronicspp.293-306, (2010)

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