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Xiang-Lei Han received the M.Sc. degree from the University of Nantes in 2007, and the Ph.D. degrees from the University of Lille, Lille, France, in 2011. His dissertation focused on the gate-all-around field-effect transistor based on high density of vertical nanowire array.
He is currently a Postdoctoral Fellow with the Institute for Electronics, Microelectronics and Nanotechnology (IEMN), Centre National de la Recherche Scientifique (CNRS), Villeneuve d'Ascq, France. His research interests are integration and characterization of nanoscale devices based on silicon, III-V and carbon nanotube, including field effect transistor, THz detector, nanoplasmonics and photocathode.
Dr. Han was the recipient of the Chinese Government Award for Outstanding Self-Financed Students Abroad in 2011 and French National Nanofabrication Network RENATECH Prize in 2013.
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#Papers: 22
#Citation: 412
H-Index: 12
G-Index: 20
Sociability: 5
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