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个人简介
Yaochung Chen (M'92–SM'01) received the B.S. degree from National Chiao Tung University, Hsinchu, Taiwan, in 1982, the M.B.A. degree from National Taiwan University, Taipei, Taiwan, in 1984, and the M.S. and Ph.D. degrees from The University of Michigan at Ann Arbor, in 1992 and 1994, respectively, where he was involved in molecular beam epitaxy crystal growth.
He is currently the Manager for the Semiconductor Materials Department, Northrop Grumman Aerospace Systems, Redondo Beach, CA. Upon graduating, he joined Hughes Aircraft Company as GaAs HEMT process lead and subsequently went on to TRW as InP power HEMT process lead. In 2001, he joined Global Communication Semiconductors where he was Vice President for Engineering. In 2005, he rejoined Northrop Grumman Aerospace Systems as Chief Technologist for the Microelectronics Processes and Products Directorate. His research interests and experiences cover a number of areas, including MBE growth, device physics, MMIC design and fabrication, filters, modules, and numerical analysis.
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论文共 8 篇作者统计合作学者相似作者
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2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3pp.669-672, (2009)
Yaochung Chen,R Coffie,W Luo,Michael Wojtowicz,I P Smorchkova,B Heying, Youngmin Kim,M V Aust,A K Oki
Honolulu, HIpp.307-310, (2007)
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