50-nm fully depleted SOI CMOS technology with HfO/sub 2/ gate dielectric and TiN gate

In this paper, we demonstrate for the first time CMOS thin-film metal gate FDSOI devices using HfO/sub 2/ gate dielectric at the 50-nm physical gate length. Symmetric V/sub T/ is achieved for long-channel nMOS and pMOS devices using midgap TiN single metal gate with undoped channel and high-k dielectric. The devices show excellent performance with a I/sub on/=500 /spl mu/A//spl mu/m and I/sub off/...