J. Conner - Advanced Products Research and Development Lab, Motorola, Inc

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Tantalum Pentoxide Gate Dielectrics Formed by Tantalum Oxidation

C. Hobbs, R. Hegde,B. Maiti,R. Nagabushnam,L. La,K. Reid, A. Dip, L. Grove,J. Conner,V. Kaushik,L. Prabhu, A. Anderson,

ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS（2011）

引用2浏览0引用

Metrology Of Silicide Contacts For Future CMOS

Stefan Zollner, R B Gregory, M Kottke, Victor Vartanian,Xiangdong Wang,D Theodore, P Fejes,J Conner,M Raymond, Xiaoyan Zhu, Dean J Denning,Scott Bolton,

AIP Conference Proceedings (2007): 337-+

引用4浏览0引用

Performance and Variability Comparisons between Multi-Gate FETs and Planar SOI Transistors

A Thean,Z H Shi,Leo Mathew,T Stephens, H Desjardin, C Parker,T R White,M W Stoker,Latha V Prabhu,R Garcia,B Y Nguyen, Simon J Murphy,

San Francisco, CA（2006）

引用46浏览0EIWOS引用

Defect passivation with fluorine in a Ta/sub x/C/ high-K gate stack for enhanced device threshold voltage stability and performance

H.-H. Tseng,Philip J. Tobin, E.A. Hebert,S. Kalpat,M. Ramon, L. R. C. Fonseca,Z.X. Jiang,James K. Schaeffer,Rama I. Hegde,Dina H. Triyoso,David C. Gilmer,W.J. Taylor,

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST（2005）

引用21浏览0EIWOS引用

50-nm fully depleted SOI CMOS technology with HfO/sub 2/ gate dielectric and TiN gate

A. Vandooren, S. Egley, M. Zavala,T. Stephens, L. Mathew, M. Rossow, A. Thean,A. Barr, Z. Shi, T. White, D. Pham,J. Conner,

Periodicals（2003）

引用19浏览0EIWOS引用

Dual-Metal Gate Cmos With Hfo2 Gate Dielectric

Sb Samavedam, Lb La,J Smith, S Dakshina-Murthy, E Luckowski,J Schaeffer,M Zavala,R Martin, V Dhandapani,D Triyoso,Hh Tseng,Pj Tobin,

San Francisco, CA, USApp.433-436, (2002)

引用71浏览0EIWOS引用

A 100 nm copper/low-k bulk CMOS technology with multi Vt and multi gate oxide integrated transistors for low standby power, high performance and RF/analog system on chip applications

Geoffrey Yeap,Jian Chen,P Grudowski,Youngdeuk Jeon, Y Shiho,Wenbao Qi,S Jallepalli,N Ramani, Kay Hellig, L Vishnubhotla, Tao Luo,Hsinghuang Tseng,

Honolulu, HI, USA（2002）

引用21浏览0EIWOS引用

80 nm poly-Si gate CMOS with HfO/sub 2/ gate dielectric

C Hobbs, Hsianrong Tseng,Kimberly G Reid,B Taylor,L Dip,L Hebert,R Garcia,Rama I Hegde, J A Grant,D C Gilmer,A Franke,V Dhandapani,

Washington, DC, USA（2001）

引用28浏览0EIWOS引用

80 nm poly-Si gate CMOS with HfO2 gate dielectric

K. Reid,B. Taylor,L. Dip,L. Hebert,R. Garcia,R. Hegde,J. Grant,D. Gilmer,A. Franke,V. Dhandapani,M. Azrak,L. Prabhu,

msra（2001）

引用26浏览0引用

Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics

D. Gilmer,C. Hobbs,R. Hegde,L. La,O. Adetutu,J. Conner,M. Tiner,L. Prabhu,S. Bagchi,P. Tobin

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS（2000）

引用21浏览0引用

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