High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique

Self-aligned source/drain (S/D) graphene field-effect transistors (GFETs) with extremely small access lengths were successfully fabricated using a simple device fabrication process without sidewall spacer formation. The self-aligned S/D GFET exhibits superior electrical characteristics, such as the intrinsic carrier mobility of 6100 cm2/Vs, the gate leakage current of 10-10-10-9 A and the contact resistance of 412 Ωμm. In particular, a cutoff frequency of 13 GHz was achieved with a rather large gate length (LG= 3 μm), which demonstrates the promising future of this self-aligned GFET.