Multi-Gate MOSFET Design

Gerhard Knoblinger,Christian Pacha,Franz Kuttner,A. Marshall,Christian Russ, P. Haibach,P. Patruno,Thomas Schulz,Klaus Von Arnim, J. P. Engelstaedter, L. Bertolissi,W. Xiong,C. R. Cleavelin,K. Schruefer

Montreux（2007）

引用 6|浏览33

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摘要

In this paper, circuit design issues of emerging multi-gate field effect transistors (MuGFET) are discussed with special emphasis on the link between circuit design and technology. The influence of novel midgap gate electrode materials on digital circuits is presented and examples of the first basic analog building blocks realized with these advanced devices are shown. Furthermore the influence of new device specific effects on analog circuits, like self heating or output conductance improvement due to undoped body are discussed and RF and ESD issues are covered

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关键词

device performance improvement,multi-gate mosfet design,novel gate,multi-gate field effect transistors,promising device structure,circuit performance,multiple gate,hole mobility improvement,leakage current,reduced parasitic capacitance,triple-gate fets,network synthesis,circuit design,electrostatic discharge,field effect transistor,digital circuits,analog circuits

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