Long-wavelength resonant vertical-cavity LED/photodetector with a 75-nm tuning range

G. L. Christenson,A. T. T. D. Tran,Z. H. Zhu,Y. H. Lo,M. Hong, J. P. Mannaerts,R. Bhat

Photonics Technology Letters, IEEE（1997）

引用 66|浏览6

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摘要

A design for a highly tunable long-wavelength LED/photodetector has been investigated. The device consists of a GaAs-based distributed Bragg reflector (DBR) that is wafer-bonded to InP-based active layers, with a surface-micromachined tunable top DBR mirror to produce the wavelength shift. A 1.5-μm device has been fabricated with a continuous tuning range of 75 nm. An extinction ratio of greater than 20 dB existed across the entire tuning range.

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关键词

III-V semiconductors,indium compounds,infrared detectors,integrated optoelectronics,light emitting diodes,micromachining,mirrors,optical interconnections,optical receivers,optical transmitters,photodetectors,semiconductor quantum wells,tuning,wafer bonding,1.5 mum,1.5-/spl mu/m device,75-nm tuning range,AlAs layers,GaAs,GaAs-AlAs,GaAs-based distributed Bragg reflector,InGaAsP,InP,InP-based active layers,compressively strained InGaAsP quantum wells,continuous tuning range,design,extinction ratio,highly tunable long-wavelength LED/photodetector,long-wavelength resonant vertical-cavity LED/photodetector,surface-micromachined tunable top DBR mirror,wafer-bonded,wavelength shift

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