High performance 0.1 /spl mu/m CMOS devices with 1.5 V power supply

Yuan Taur,S J Wind,Y J Mii,Y T Lii,Dan Moy,K A Jenkins,C L Chen,P J Coane,D Klaus, J J Bucchignano,M G Rosenfield, M G R Thomson,M Polcari

Washington, DC, USA（1993）

引用 167|浏览53

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摘要

This paper presents the design, fabrication, and characterization of high-performance 0.1 /spl mu/m-channel CMOS devices with dual n/sup +p/sup +/ polysilicon gates on 35 /spl Aring/-thick gate oxide. A 22 ps/stage CMOS-inverter delay is obtained at a power supply voltage of 1.5 V. The highest unity-current-gain frequencies (f/sub T/) measured are 118 GHz for nMOSFET, and 67 GHz for pMOSFET.<>

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关键词

cmos integrated circuits,elemental semiconductors,insulated gate field effect transistors,integrated circuit technology,integrated logic circuits,silicon,0.1 micron,1.5 v,22 ps,cmos devices,si,characterization,dual n/sup +p/sup +/ polysilicon gates,fabrication,inverter delay

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