GaN MOS-HEMT using atomic layer deposition Al2O3 as gate dielectric and surface passivation

Peide D Ye,Byungdo Yang, K K Ng,J Bude, G D Wilk, Sandip Halder,J C M Hwang

International Journal of High Speed Electronics and Systems（2011）

引用 9|浏览10

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摘要

We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic layer deposition (ALD) Al2O3 film as a gate dielectric and for surface passivation simultaneously. Compared to the conventional AlGaN/GaN HEMT of the same design, six order of magnitude smaller gate leakage current and tripled drain current at forward gate bias demonstrate the effectiveness of ALD Al2O3 as a gate dielectric. The high transconductance and high effective two-dimensional electron mobility verify the high-quality of Al2O3/AlGaN interface with low interface trap density. The Al2O3 passivation effect is also studied by sheet resistance measurement and short pulse drain characterization.

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关键词

iii-v semiconductors,mis devices,aluminium compounds,atomic layer deposition,electron mobility,gallium compounds,high electron mobility transistors,interface states,leakage currents,passivation,wide band gap semiconductors,2d electron mobility,al2o3-algan,mos-hemt,drain current,gate dielectric,gate leakage current,interface trap density,metal-oxide-semiconductor high electron mobility transistor,sheet resistance measurement,short pulse drain characterization,surface passivation,transconductance,leakage current,high electron mobility transistor

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