Impacts of $\hbox{N}_{2}$ and $\hbox{NH}_{3}$ Plasma Surface Treatments on High-Performance LTPS-TFT With High- $\kappa$ Gate Dielectric

Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high- kappa gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility muFE improvements of ~ 86.0% and 112.5% are observed for LTPS-TFTs with HfO2 gate dielectric after N2 and NH3 plasma surface treatments, respectively. In addition, the N2 and NH3 plasma surfa...