Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
Electron Devices, IEEE Transactions, Volume 62, Issue 7, 2015, Pages 2155-2161.
edge terminationgan-on-si vertical deviceleakage controlleakage originpower electronicsMore(9+)
Conventional GaN vertical devices, though promising for high-power applications, need expensive GaN substrates. Recently, low-cost GaN-on-Si vertical diodes have been demonstrated for the first time. This paper presents a systematic study to understand and control the OFF-state leakage current in the GaN-on-Si vertical diodes. Various lea...More
Full Text (Upload PDF)
PPT (Upload PPT)