Fabrication and characterization of mixed-signal polymer-enhanced silicon interposer featuring photodefined coax TSVs and high-Q inductors
Electronic Components and Technology Conference（2015）
摘要
This paper demonstrates: (a) low-loss photodefined polymer-embedded copper vias within a 10 Ω-cm resistivity silicon to yield electrical performance similar to glass interposers; (b) coaxial polymer-embedded vias with desired wideband impedance and reduced coupling; and (c) high-Q inductors attained using the photodefined polymer-enhancement technology.
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关键词
elemental semiconductors,inductors,silicon,three-dimensional integrated circuits,high-Q inductors,low-loss photodefined polymer-embedded copper vias,mixed-signal polymer-enhanced silicon interposer,photodefined coax TSV,photodefined polymer-enhancement technology
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