Investigation of Geometric Effect Impact on SONOS Memory in a NAND Array Structure

Shawhung Ku,Litho Chong,Yinjen Chen,Tenghao Yeh,Shangwei Lin,Tzungting Han,Niankai Zous, Ijen Huang,Mingshiang Chen,Wenpin Lu,Kuangchao Chen,Chihyuan Lu

IEEE Transactions on Semiconductor Manufacturing（2011）

引用 1|浏览36

暂无评分

摘要

Geometric effects on program/erase speeds, endurance, and charge retention of polysilicon-oxide-nitride-oxide-silicon-type memories are investigated with various structures, including Flash cells, capacitors, and NAND array strings of different dimensions. NAND strings with common word-lines or/and bit-lines were employed to characterize the Lg and W effect on device performance, which builds up t...

查看译文

关键词

Capacitors,Arrays,SONOS devices,Nonvolatile memory,Performance evaluation,Voltage measurement,Interface states

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要