An analysis of 1.55 mum InAs/InP quantum dash lasers

Applied Physics Letters(2008)

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摘要
Calculations show that electron states are not confined in the dashes in 1.55 mu m InAs/InP quantum dash-in-a-well laser structures. The combination of strain and three-dimensional confinement reduces the calculated density of states (DOS) near the valence band maximum, with the conduction and valence DOS then almost equal close to the band edges. Calculations and photoabsorption measurements show strongly polarized spontaneous emission and gain spectra. Experimental analysis shows the room temperature threshold current is dominated by nonradiative current paths. (C) 2008 American Institute of Physics.
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关键词
quantum dot,spontaneous emission,spatial pattern,room temperature,three dimensional,experimental analysis,density of state,valence band
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